公开(公告)号：US20170107404A1

公开(公告)日：2017-04-20

申请号：US15293816

申请日：2016-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ye-hwan KIM ,  Un-gyu PAIK ,  Ji-hoon SEO

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044

Abstract: A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NO3 functional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.

公开(公告)号：US20160086813A1

公开(公告)日：2016-03-24

申请号：US14708544

申请日：2015-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ye-hwan KIM ,  Un-gyu PAIK ,  Ji-hoon SEO ,  Sang-kyun KIM ,  Jong-woo KIM ,  Dong-jun LEE

IPC: H01L21/306 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/66545 ,  H01L21/31053 ,  H01L21/823437

Abstract: A method of fabricating a semiconductor device includes forming an active region in a semiconductor substrate, forming a plurality of dummy gates on the active region, the plurality of dummy gates having a gate mask disposed thereon, forming an interlayer insulating layer on the gate mask, and performing a one-time chemical mechanical polishing (CMP) process by using a slurry composition capable of polishing the interlayer insulating layer and the gate mask until top surfaces of the dummy gates are exposed.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底中形成有源区，在有源区上形成多个虚拟栅极，多个伪栅极具有栅极掩模，在栅极掩模上形成层间绝缘层， 并且通过使用能够抛光层间绝缘层和栅极掩模的浆料组合物直到伪栅极的顶表面露出来进行一次化学机械抛光（CMP）工艺。