公开(公告)号：US20150221701A1

公开(公告)日：2015-08-06

申请号：US14556770

申请日：2014-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-kyu Yang ,  Young-bae Kim ,  Hyun-sang Hwang ,  Ji-yong Woo

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/1233 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/141 ,  H01L45/146

Abstract: A resistive memory device includes a stack of two layers of variable resistance material and top, middle, and bottom electrodes, the stack symmetrical in composition about the middle electrode.

Abstract translation: 电阻式存储器件包括两层可变电阻材料和顶部，中间和底部电极的堆叠，所述堆叠组成关于中间电极对称。