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    Resistive switching devices and memory devices including the same
    1.
    发明授权
    Resistive switching devices and memory devices including the same 有权
    电阻式开关器件和包括其的存储器件

    公开(公告)号：US09153778B2

    公开(公告)日：2015-10-06

    申请号：US13867411

    申请日：2013-04-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-min Kim ,  Young-bae Kim ,  Chang-jung Kim ,  Seung-ryul Lee ,  Man Chang ,  Sung-ho Kim ,  Eun-ju Cho

    IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

    CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/55 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233

    Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.

    Abstract translation: 电阻式开关器件包括在第一电极和第二电极之间的第一材料层。 第一材料层具有平行于第一区域的第一区域和第二区域。 第一区域对应于形成在第一材料层中的导电路径，并且被配置为响应于大于或等于第一电压的施加电压从低电阻状态切换到高电阻状态。 第二区域被配置为当施加的电压大于或等于第二电压时，切换到低于高电阻状态下的第一区域的电阻值的第一电阻值。 当第二区域具有第一电阻值时，第一区域保持恒定或基本恒定。

    Memory device and apparatus including the same
    5.
    发明授权
    Memory device and apparatus including the same 有权
    存储装置及其装置

    公开(公告)号：US09257485B2

    公开(公告)日：2016-02-09

    申请号：US14192371

    申请日：2014-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-bae Kim ,  Kyung-min Kim ,  Sung-ho Kim ,  Seung-ryul Lee ,  Man Chang ,  Eun-ju Cho ,  Sae-jin Kim ,  Chang-jung Kim

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146

    Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.

    Abstract translation: 存储器件可以包括与第一电极间隔开的第一电极和第二电极。 存储器件还可以包括设置在第一电极和第二电极之间的存储元件和设置在第一电极和第二电极之间的开关元件。 开关元件可以被配置为控制对存储器元件的信号访问。 存储器件还可以包括设置在存储器元件和开关元件之间的阻挡层，阻挡层包括绝缘材料。

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