公开(公告)号：US20150221701A1

公开(公告)日：2015-08-06

申请号：US14556770

申请日：2014-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-kyu Yang ,  Young-bae Kim ,  Hyun-sang Hwang ,  Ji-yong Woo

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/1233 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/141 ,  H01L45/146

Abstract: A resistive memory device includes a stack of two layers of variable resistance material and top, middle, and bottom electrodes, the stack symmetrical in composition about the middle electrode.

Abstract translation: 电阻式存储器件包括两层可变电阻材料和顶部，中间和底部电极的堆叠，所述堆叠组成关于中间电极对称。

公开(公告)号：US20180033826A1

公开(公告)日：2018-02-01

申请号：US15446024

申请日：2017-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seol Choi ,  Hideki Horii ,  Dong-ho Ahn ,  Seong-geon Park ,  Dong-jun Seong ,  Min-kyu Yang ,  Jung-moo Lee

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2427 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/003 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/76 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

公开(公告)号：US10186552B2

公开(公告)日：2019-01-22

申请号：US15446024

申请日：2017-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seol Choi ,  Hideki Horii ,  Dong-ho Ahn ,  Seong-geon Park ,  Dong-jun Seong ,  Min-kyu Yang ,  Jung-moo Lee

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.