公开(公告)号：US09633727B2

公开(公告)日：2017-04-25

申请号：US14830377

申请日：2015-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Man Chang ,  In-gyu Baek ,  Sang-heon Lee ,  Hyun-sang Hwang

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56

CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0064 ,  G11C2013/0092

Abstract: A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.

公开(公告)号：US08902632B2

公开(公告)日：2014-12-02

申请号：US13718206

申请日：2012-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-bae Kim ,  Hyun-sang Hwang ,  Chang-jung Kim

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56 ,  H01L45/00 ,  G11C11/21

CPC classification number: G11C11/21 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

Abstract: Hybrid resistive memory devices and methods of operating and manufacturing the same, include at least two resistive memory units. At least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state.

Abstract translation: 混合电阻式存储器件及其操作和制造方法包括至少两个电阻存储器单元。 所述至少两个电阻式存储器单元中的至少一个是被配置为在长期可塑性状态下操作的电阻存储器单元。

公开(公告)号：US20150221701A1

公开(公告)日：2015-08-06

申请号：US14556770

申请日：2014-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-kyu Yang ,  Young-bae Kim ,  Hyun-sang Hwang ,  Ji-yong Woo

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/1233 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/141 ,  H01L45/146

Abstract: A resistive memory device includes a stack of two layers of variable resistance material and top, middle, and bottom electrodes, the stack symmetrical in composition about the middle electrode.

Abstract translation: 电阻式存储器件包括两层可变电阻材料和顶部，中间和底部电极的堆叠，所述堆叠组成关于中间电极对称。