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公开(公告)号：US11594538B2
公开(公告)日：2023-02-28
申请号：US17469340
申请日：2021-09-08
发明人： Sang Ho Lee , Eun A Kim , Ki Seok Lee , Jay-Bok Choi , Keun Nam Kim , Yong Seok Ahn , Jin-Hwan Chun , Sang Yeon Han , Sung Hee Han , Seung Uk Han , Yoo Sang Hwang
IPC分类号： H01L21/00 , H01L27/108 , H01L23/528
摘要： A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.
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2.发明授权公开(公告)号：US11282787B2
公开(公告)日：2022-03-22
申请号：US16879009
申请日：2020-05-20
发明人： Taejin Park , Keunnam Kim , Sohyun Park , Jin-Hwan Chun , Wooyoung Choi , Sunghee Han , Inkyoung Heo , Yoosang Hwang
IPC分类号： H01L29/40 , H01L23/48 , H01L23/52 , H01L23/528 , H01L29/06 , G11C5/10 , H01L29/423 , H01L27/108 , H01L21/768
摘要： The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
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3.发明授权公开(公告)号：US11929324B2
公开(公告)日：2024-03-12
申请号：US18133575
申请日：2023-04-12
发明人： Taejin Park , Keunnam Kim , Sohyun Park , Jin-Hwan Chun , Wooyoung Choi , Sunghee Han , Inkyoung Heo , Yoosang Hwang
IPC分类号： H01L23/48 , G11C5/10 , H01L21/768 , H01L23/52 , H01L23/528 , H01L29/06 , H01L29/423 , H10B12/00
CPC分类号： H01L23/528 , G11C5/10 , H01L21/76831 , H01L29/0649 , H01L29/4236 , H10B12/485
摘要： The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
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公开(公告)号：US11342331B2
公开(公告)日：2022-05-24
申请号：US16891183
申请日：2020-06-03
发明人： Keun Nam Kim , Jin-Hwan Chun , Yoo Sang Hwang
IPC分类号： H01L27/108 , H01L23/532 , H01L21/768
摘要： A semiconductor device is provided including a substrate including a trench. A first conductive pattern is disposed within the trench. The first conductive pattern has a width smaller than a width of the trench. A first spacer extends along at least a portion of a side surface of the first conductive pattern and the trench. A second spacer at least partially fills the trench adjacent to the first spacer. An air spacer is provided including a first portion between the first spacer and the second spacer, and a second portion disposed on the second spacer and the first portion. A width of the second portion of the air spacer is greater than a width of the first portion of the air spacer.
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5.发明授权公开(公告)号：US11658117B2
公开(公告)日：2023-05-23
申请号：US17667866
申请日：2022-02-09
发明人： Taejin Park , Keunnam Kim , Sohyun Park , Jin-Hwan Chun , Wooyoung Choi , Sunghee Han , Inkyoung Heo , Yoosang Hwang
IPC分类号： H01L23/48 , H01L23/52 , H01L23/528 , H01L29/06 , G11C5/10 , H01L29/423 , H01L27/108 , H01L21/768
CPC分类号： H01L23/528 , G11C5/10 , H01L21/76831 , H01L27/10888 , H01L29/0649 , H01L29/4236
摘要： The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
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6.发明申请公开(公告)号：US20220165657A1
公开(公告)日：2022-05-26
申请号：US17667866
申请日：2022-02-09
发明人： TAEJIN PARK , Keunnam Kim , Sohyun Park , Jin-Hwan Chun , Wooyoung Choi , Sunghee Han , Inkyoung Heo , Yoosang Hwang
IPC分类号： H01L23/528 , H01L29/06 , G11C5/10 , H01L29/423 , H01L27/108 , H01L21/768
摘要： The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
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公开(公告)号：US11121134B2
公开(公告)日：2021-09-14
申请号：US16860276
申请日：2020-04-28
发明人： Sang Ho Lee , Eun A Kim , Ki Seok Lee , Jay-Bok Choi , Keun Nam Kim , Yong Seok Ahn , Jin-Hwan Chun , Sang Yeon Han , Sung Hee Han , Seung Uk Han , Yoo Sang Hwang
IPC分类号： H01L21/00 , H01L27/108 , H01L23/528
摘要： A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.
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8.发明申请公开(公告)号：US20210082799A1
公开(公告)日：2021-03-18
申请号：US16879009
申请日：2020-05-20
发明人： Taejin Park , Keunnam Kim , Sohyun Park , Jin-Hwan Chun , Wooyoung Choi , Sunghee Han , Inkyoung Heo , Yoosang Hwang
IPC分类号： H01L23/528 , H01L29/06 , H01L21/768 , H01L29/423 , H01L27/108 , G11C5/10
摘要： The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
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