公开(公告)号：US20190244960A1

公开(公告)日：2019-08-08

申请号：US16386731

申请日：2019-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyuk PARK ,  Byoungho KWON ,  Inho KIM ,  Hyesung PARK ,  Jin-Woo BAE ,  Yanghee LEE ,  Inseak HWANG

IPC: H01L27/108

CPC classification number: H01L27/10855 ,  H01L22/30 ,  H01L22/34 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10876

Abstract: A method of fabricating a semiconductor device includes providing a substrate including a pair of first regions and a second region therebetween, forming first patterns on the respective first regions to at least partially define a stepwise portion at the second region, and forming a dummy pattern that at least partially fills the stepwise portion. The dummy pattern may be an electrically floating structure. The dummy pattern may be formed as part of forming second patterns on the respective first regions, and the dummy pattern and the second patterns may include substantially common materials. Because the dummy pattern at least partially fills the stepwise portion at the second region, the material layer covering the second patterns and the dummy pattern may omit a corresponding stepwise portion.

公开(公告)号：US20200212047A1

公开(公告)日：2020-07-02

申请号：US16814387

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyuk PARK ,  Byoungho KWON ,  Inho KIM ,  Hyesung PARK ,  Jin-Woo BAE ,  Yanghee LEE ,  Inseak HWANG

IPC: H01L27/108

Abstract: A method of fabricating a semiconductor device includes providing a substrate including a pair of first regions and a second region therebetween, forming first patterns on the respective first regions to at least partially define a stepwise portion at the second region, and forming a dummy pattern that at least partially fills the stepwise portion. The dummy pattern may be an electrically floating structure. The dummy pattern may be formed as part of forming second patterns on the respective first regions, and the dummy pattern and the second patterns may include substantially common materials. Because the dummy pattern at least partially fills the stepwise portion at the second region, the material layer covering the second patterns and the dummy pattern may omit a corresponding stepwise portion.

公开(公告)号：US20200227419A1

公开(公告)日：2020-07-16

申请号：US16833914

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyuk PARK ,  Byoungho KWON ,  Inho KIM ,  Hyesung PARK ,  Jin-Woo BAE ,  Yanghee LEE ,  Inseak HWANG

IPC: H01L27/108 ,  H01L21/66

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.