公开(公告)号：US20150340250A1

公开(公告)日：2015-11-26

申请号：US14562010

申请日：2014-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mong-Sup LEE ,  Dong-Gyun HAN ,  Jong-Hyuk PARK

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67253

Abstract: A wet etching nozzle, semiconductor manufacturing equipment including the same, and a wet etching method using the same are provided. The wet etching nozzle includes a first supply pipe configured to supply a first solution, for etching a partial area of an etched layer, to a substrate including the etched layer; a first suction pipe configured to suck the first solution from the substrate; a second supply pipe configured to supply a second solution for cleaning the partial area of the etched layer; and a second suction pipe configured to suck the second solution from the substrate.

Abstract translation: 提供了一种湿式蚀刻喷嘴，包括该蚀刻喷嘴的半导体制造设备和使用该蚀刻喷嘴的湿式蚀刻方法。 湿蚀刻喷嘴包括：第一供给管，被配置为向蚀刻层的基板供给用于蚀刻蚀刻层的局部区域的第一溶液; 第一吸入管，其构造成从所述基板吸入所述第一溶液; 第二供应管，被配置为提供用于清洁所述蚀刻层的部分区域的第二溶液; 以及构造成从所述基板吸取所述第二溶液的第二吸入管。