公开(公告)号：US20150340250A1

公开(公告)日：2015-11-26

申请号：US14562010

申请日：2014-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mong-Sup LEE ,  Dong-Gyun HAN ,  Jong-Hyuk PARK

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67253

Abstract: A wet etching nozzle, semiconductor manufacturing equipment including the same, and a wet etching method using the same are provided. The wet etching nozzle includes a first supply pipe configured to supply a first solution, for etching a partial area of an etched layer, to a substrate including the etched layer; a first suction pipe configured to suck the first solution from the substrate; a second supply pipe configured to supply a second solution for cleaning the partial area of the etched layer; and a second suction pipe configured to suck the second solution from the substrate.

Abstract translation: 提供了一种湿式蚀刻喷嘴，包括该蚀刻喷嘴的半导体制造设备和使用该蚀刻喷嘴的湿式蚀刻方法。 湿蚀刻喷嘴包括：第一供给管，被配置为向蚀刻层的基板供给用于蚀刻蚀刻层的局部区域的第一溶液; 第一吸入管，其构造成从所述基板吸入所述第一溶液; 第二供应管，被配置为提供用于清洁所述蚀刻层的部分区域的第二溶液; 以及构造成从所述基板吸取所述第二溶液的第二吸入管。

公开(公告)号：US20200303182A1

公开(公告)日：2020-09-24

申请号：US16892478

申请日：2020-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Ho JANG ,  Jeong-Yong BAE ,  Woo-Young KIM ,  Hyun-Jung LEE ,  Se-Jin PARK ,  Yong-Sun KO ,  Dong-Gyun HAN ,  Woo-Gwan SHIM ,  Boong KIM

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

公开(公告)号：US20180190485A1

公开(公告)日：2018-07-05

申请号：US15826916

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd

Inventor： Won-Ho JANG ,  Hyun-Jung LEE ,  Se-Jin PARK ,  Yong-Sun KO ,  Dong-Gyun HAN ,  Woo-Gwan SHIM ,  Jeong-Yong BAE ,  Woo-Young KIM ,  Boong KIM

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00

CPC classification number: H01L21/02101 ,  B08B3/08 ,  B08B7/0021 ,  B08B2203/007 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68742 ,  H01L21/6875

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.