公开(公告)号：US09093422B2

公开(公告)日：2015-07-28

申请号：US14245007

申请日：2014-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongun Kim ,  Dong-Hyun Kim ,  Hyun-Seung Song

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/165

CPC classification number: H01L29/7851 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66818 ,  H01L29/7848 ,  H01L29/7853 ,  H01L2029/7858

Abstract: A semiconductor device includes a fin portion protruding from a substrate. The fin portion includes a base part, an intermediate part on the base part, and a channel part on the intermediate part. A width of the intermediate part is less than a width of the base part and greater than a width of the channel part. A gate electrode coves both sidewalls and a top surface of the channel part, and a device isolation pattern covers both sidewalls of the base part and both sidewalls of the intermediate part.

Abstract translation: 半导体器件包括从衬底突出的鳍部。 翅片部分包括基部，基部上的中间部分和中间部分上的通道部分。 中间部分的宽度小于基部的宽度并且大于通道部分的宽度。 栅极电极使沟道部分的两个侧壁和顶表面均匀，并且器件隔离图案覆盖基部的两个侧壁和中间部分的两个侧壁。

公开(公告)号：US09548390B2

公开(公告)日：2017-01-17

申请号：US14742710

申请日：2015-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongun Kim ,  Dong-Hyun Kim ,  Hyun-Seung Song

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/165

CPC classification number: H01L29/7851 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66818 ,  H01L29/7848 ,  H01L29/7853 ,  H01L2029/7858

Abstract: A semiconductor device includes a fin portion protruding from a substrate. The fin portion includes a base part, an intermediate part on the base part, and a channel part on the intermediate part. A width of the intermediate part is less than a width of the base part and greater than a width of the channel part. A gate electrode coves both sidewalls and a top surface of the channel part, and a device isolation pattern covers both sidewalls of the base part and both sidewalls of the intermediate part.

Abstract translation: 半导体器件包括从衬底突出的鳍部。 翅片部分包括基部，基部上的中间部分和中间部分上的通道部分。 中间部分的宽度小于基部的宽度并且大于通道部分的宽度。 栅极电极使沟道部分的两个侧壁和顶表面均匀，并且器件隔离图案覆盖基部的两个侧壁和中间部分的两个侧壁。