公开(公告)号：US20150325799A1

公开(公告)日：2015-11-12

申请号：US14661619

申请日：2015-03-18

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd

Inventor： Kyuyoung HWANG ,  Ohyun KWON ,  Sangmo KIM ,  Joohee SEO ,  Seungjae LEE ,  Byoungki CHOI ,  Hyeonho CHOI

IPC: H01L51/00 ,  H01L51/50 ,  C07D471/14

CPC classification number: C07D471/14 ,  C07D471/04 ,  C07D471/22 ,  C07D491/147 ,  C07D491/22 ,  C07D495/14 ,  C07D519/00 ,  C07F7/0816 ,  C09B1/00 ,  C09B3/14 ,  C09B23/148 ,  C09B47/00 ,  C09B57/00 ,  C09B57/008 ,  C09B57/02 ,  C09B57/10 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096

Abstract: A condensed cyclic compound represented by Formulae 1A or 1B: wherein in Formulae 1A and 1 B, groups, rings, substituents, and variables are defined in the detailed description.

Abstract translation: 由式1A或1B表示的缩合的环状化合物：其中在式1A和1B中，基团，环，取代基和变量在详细描述中定义。

公开(公告)号：US20220190242A1

公开(公告)日：2022-06-16

申请号：US17395043

申请日：2021-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heejung KIM ,  Taehong MIN ,  Chorong PARK ,  Joohee SEO ,  Eunsuk HWANG

IPC: H01L45/00 ,  H01L27/24

Abstract: A method of fabricating a three-dimensional semiconductor memory device includes forming a cell stack layer covering key and cell regions of a substrate and including a variable resistance layer and a switching layer, forming key mask patterns on the cell stack layer of the key region and cell mask patterns on the cell stack layer of the cell region, and simultaneously forming a plurality of key patterns on the key region and a plurality of memory cells on the cell region by etching the cell stack layer using the key and cell mask patterns as an etching mask. Each memory cell includes a variable resistance pattern and a switching pattern formed by etching the variable resistance layer and the switching layer. Each key pattern includes a dummy variable resistance pattern and a dummy switching pattern formed by etching the variable resistance layer and the switching layer.

公开(公告)号：US20180182970A1

公开(公告)日：2018-06-28

申请号：US15794087

申请日：2017-10-26

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangshin LEE ,  Dong Wan RYU ,  Joohee SEO ,  Eun Sun YU ,  Seungjae LEE ,  Chunkeun JANG ,  Sung-Hyun JUNG

IPC: H01L51/00 ,  H01L51/50 ,  H01L27/32

CPC classification number: H01L51/0045 ,  H01L27/3237 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/50 ,  H01L51/5016 ,  H01L2251/5384

Abstract: Disclosed are a composition for an organic optoelectric device including at least one first compound for an organic optoelectric device represented by Chemical Formula 1; and at least one second compound for an organic optoelectric device including a carbazole moiety represented by Chemical Formula 2, an organic optoelectric device include the same, and a display device. Details of Chemical Formula 1 and Chemical Formula 2 are the same as defined in the specification.