METHOD AND APPARATUS FOR TRANSMITTING MOBILE EDGE COMPUTING APPLICATION

    公开(公告)号:US20230021063A1

    公开(公告)日:2023-01-19

    申请号:US17952679

    申请日:2022-09-26

    Abstract: A method, performed by an electronic device, of transmitting a mobile edge application, includes obtaining information related to an execution environment of at least one pre-installed mobile edge application, receiving an installation request for a new mobile edge application, determining a mobile edge computing host for installing the new mobile edge application, based on the information related to the execution environment and the requirement information related to an execution environment of the new mobile edge application, and transmitting the new mobile edge application to the determined mobile edge computing host.

    METHOD AND APPARATUS FOR PROVIDING MEC SERVICE

    公开(公告)号:US20220116831A1

    公开(公告)日:2022-04-14

    申请号:US17452718

    申请日:2021-10-28

    Abstract: Provided is a method, performed by a source edge data network, of providing a service in a wireless communication system includes identifying a target edge data network and a handover terminal handed over to the target edge data network among a plurality of terminals provided with the service from the source edge data network; transmitting information about the identified target edge data network to a server; synchronizing status information of an application for providing the service with the target edge data network; and synchronizing user information for each of the plurality of terminals with the target edge data network.

    METHOD OF FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

    公开(公告)号:US20220190242A1

    公开(公告)日:2022-06-16

    申请号:US17395043

    申请日:2021-08-05

    Abstract: A method of fabricating a three-dimensional semiconductor memory device includes forming a cell stack layer covering key and cell regions of a substrate and including a variable resistance layer and a switching layer, forming key mask patterns on the cell stack layer of the key region and cell mask patterns on the cell stack layer of the cell region, and simultaneously forming a plurality of key patterns on the key region and a plurality of memory cells on the cell region by etching the cell stack layer using the key and cell mask patterns as an etching mask. Each memory cell includes a variable resistance pattern and a switching pattern formed by etching the variable resistance layer and the switching layer. Each key pattern includes a dummy variable resistance pattern and a dummy switching pattern formed by etching the variable resistance layer and the switching layer.

    METHOD AND APPARATUS FOR PROVIDING EDGE COMPUTING SERVICES

    公开(公告)号:US20210243264A1

    公开(公告)日:2021-08-05

    申请号:US17162726

    申请日:2021-01-29

    Abstract: An example method, performed by an edge data network configuration server, of relocating at least one service, currently provided from a source edge data network to at least one terminal, to a plurality of edge data networks having a hierarchical structure includes obtaining a service relocation request from the at least one terminal, determining relocation candidate services by reflecting the service relocation request, determining priorities of the relocation candidate services, obtaining location information of the at least one terminal, determining a relocation target service and a target edge data network based on at least one of the priorities or the location information, and requesting the target edge data network to provide the relocation target service to the at least one terminal, wherein the source edge data network and the target edge data network are hierarchically included in different tiers.

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20170053920A1

    公开(公告)日:2017-02-23

    申请号:US15230585

    申请日:2016-08-08

    CPC classification number: H01L27/10894 H01L27/11582 H01L28/00

    Abstract: A method of fabricating a semiconductor device includes forming first cell patterns on a substrate, forming a first layer relative to the first cell patterns, and forming a second cell pattern and a peripheral pattern on the first layer. The second cell pattern includes first holes in a cell region and the peripheral pattern is located in a peripheral region. The method also includes filling the first holes, removing the second cell pattern to expose pillars, and forming second holes. Each of the second holes corresponds to adjacent cell spacers of the pillars. The method also includes removing the pillars to form third holes corresponding to respective ones of the cell spacers, and etching the substrate using the cell spacers, the first cell patterns, and the peripheral pattern as etch masks to form a trench.

    Abstract translation: 制造半导体器件的方法包括在衬底上形成第一单元图形,相对于第一单元图案形成第一层,并在第一层上形成第二单元图案和周边图案。 第二单元图案包括单元区域中的第一孔,并且外围图案位于周边区域中。 该方法还包括填充第一孔,去除第二细胞图案以暴露柱,以及形成第二孔。 每个第二孔对应于柱的相邻电池间隔件。 该方法还包括移除柱以形成对应于各个单元间隔物的第三孔,以及使用电池间隔物,第一电池图案和外围图案作为蚀刻掩模蚀刻衬底以形成沟槽。

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