公开(公告)号：US09653287B2

公开(公告)日：2017-05-16

申请号：US14919634

申请日：2015-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mark Rodder ,  Joon Hong ,  Jorge Kittl ,  Borna Obradovic

IPC: H01L21/02 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L29/06 ,  H01L21/285

CPC classification number: H01L21/02603 ,  H01L21/28518 ,  H01L21/28531 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/41758 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/78696

Abstract: A field effect transistor (FET) and a method to form the FET are disclosed. The FET comprises a channel region comprising a nanosheet layer/sacrificial layer stack. The stack comprises at least one nanosheet layer/sacrificial layer pair. Each nanosheet layer/sacrificial layer pair comprises an end surface. A conductive material layer is formed on the end surface of the pairs, and a source/drain contact is formed on the conductive material layer. In one embodiment, the sacrificial layer of at least one pair further may comprise a low-k dielectric material proximate to the end surface of the pair. A surface of the low-k dielectric material proximate to the end surface of the pair is in substantial alignment with the end surface of the nanosheet layer. Alternatively, the surface of the low-k dielectric material proximate to the end surface of the pair is recessed with respect to the end surface of the nanosheet layer.