公开(公告)号：US11984520B2

公开(公告)日：2024-05-14

申请号：US17671697

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung Joe ,  Jonghwa Shin ,  Joonkyo Jung ,  Jong Uk Kim

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L31/02327 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

公开(公告)号：US20250022904A1

公开(公告)日：2025-01-16

申请号：US18732941

申请日：2024-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mingwan Cho ,  Jonghwa Shin ,  Joonkyo Jung ,  Shin Ho Lee ,  Min Sung Heo

IPC: H01L27/146 ,  H01L31/105

Abstract: An image sensor pixel includes first, second and third PIN photodiodes having respective first, second and third widths, which are unequal to each other, and respective first, second and third absorption spectra associated therewith, which are unequal to each other. The first absorption spectra is a first linear combination of three color matching functions divided by a wavelength of light incident the image sensor, the second absorption spectra is a second linear combination of the three color matching functions divided by a wavelength of light incident the image sensor, and the third absorption spectra is a third linear combination of the three color matching functions divided by a wavelength of light incident the image sensor.