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公开(公告)号：US20250022904A1
公开(公告)日：2025-01-16
申请号：US18732941
申请日：2024-06-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Mingwan Cho , Jonghwa Shin , Joonkyo Jung , Shin Ho Lee , Min Sung Heo
IPC: H01L27/146 , H01L31/105
Abstract: An image sensor pixel includes first, second and third PIN photodiodes having respective first, second and third widths, which are unequal to each other, and respective first, second and third absorption spectra associated therewith, which are unequal to each other. The first absorption spectra is a first linear combination of three color matching functions divided by a wavelength of light incident the image sensor, the second absorption spectra is a second linear combination of the three color matching functions divided by a wavelength of light incident the image sensor, and the third absorption spectra is a third linear combination of the three color matching functions divided by a wavelength of light incident the image sensor.
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公开(公告)号：US11984520B2
公开(公告)日：2024-05-14
申请号：US17671697
申请日：2022-02-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Insung Joe , Jonghwa Shin , Joonkyo Jung , Jong Uk Kim
IPC: H01L31/0232 , H01L31/102
CPC classification number: H01L31/02327 , H01L31/102
Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.
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公开(公告)号：US11693237B2
公开(公告)日：2023-07-04
申请号：US17519347
申请日：2021-11-04
Inventor： Jeongyub Lee , Reehyang Kim , Jonghwa Shin , Kiyeon Yang , Yongsung Kim , Jaekwan Kim , Changseung Lee , Narae Han
CPC classification number: G02B27/0025 , G02B1/002 , G02B3/02 , G02B5/0825
Abstract: A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.
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公开(公告)号：US11194153B2
公开(公告)日：2021-12-07
申请号：US16421857
申请日：2019-05-24
Inventor： Jeongyub Lee , Reehyang Kim , Jonghwa Shin , Kiyeon Yang , Yongsung Kim , Jaekwan Kim , Changseung Lee , Narae Han
Abstract: Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.
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