公开(公告)号：US20250168531A1

公开(公告)日：2025-05-22

申请号：US18950632

申请日：2024-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyukbin Kwon ,  Joosung Moon ,  Sungjae Byun ,  Minwoong Seo

IPC: H04N25/77 ,  H02M3/07 ,  H04N25/709

Abstract: An image sensor including a pixel array in which a plurality of pixels are arranged in rows and columns, a voltage generator configured to generate a plurality of voltages including a first power supply voltage and a second power supply voltage. The first power supply voltage and the second power supply voltage have a same voltage level. The image sensor further including a row driver configured to generate a pixel control signal provided to the plurality of pixels based on the first power supply voltage during a first period and generate the pixel control signal based on the second power supply voltage during a second period after the first period.

公开(公告)号：US10964740B2

公开(公告)日：2021-03-30

申请号：US16407870

申请日：2019-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyong Choi ,  Haemin Lim ,  Joosung Moon ,  Ingyu Baek ,  Seunghan Yoo ,  Minjung Chung

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a photoelectric conversion layer in the semiconductor substrate, transistors on the first surface of the semiconductor substrate, a first interlayer insulation layer on the transistors, a first lower pad electrode and a second lower pad electrode spaced apart from the first lower pad electrode on the first interlayer insulation layer, a mold insulation layer on the first and second lower pad electrodes, first and second lower electrodes in the mold insulation layer, a dielectric layer on the first and second lower electrodes, an upper electrode on the dielectric layer, and an upper pad electrode connected to the upper electrode and including a different conductive material from the first and second lower pad electrodes. The first lower electrodes are on the first lower pad electrode, and the second lower electrodes are on the second lower pad electrode.

公开(公告)号：US20250097595A1

公开(公告)日：2025-03-20

申请号：US18828137

申请日：2024-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joosung Moon ,  Hyukbin Kwon ,  Sungjae Byun

IPC: H04N25/532 ,  H04N25/766

Abstract: An image sensor and an image processing system. The image sensor includes a pixel array comprising a plurality of pixels, a row driver configured to generate control signals for controlling the plurality of pixels, the row driver configured to use an external voltage received from a source outside the image sensor and an internal voltage generated within the image sensor, and a voltage generator configured to generate the internal voltage, wherein the external voltage includes a first external voltage and a second external voltage, the internal voltage includes a first internal voltage and a second internal voltage, a level of the first internal voltage is higher than a level of the second internal voltage, and a level of the first external voltage is between the level of the first internal voltage and the level of the second internal voltage.

公开(公告)号：US11509851B2

公开(公告)日：2022-11-22

申请号：US17396320

申请日：2021-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heesung Shim ,  Sangyoon Kim ,  Joosung Moon

IPC: H04N5/378 ,  H04N5/355 ,  H04N5/374 ,  H01L27/146 ,  H04N5/3745 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the plurality of pixels includes a photodiode; a floating diffusion node configured to integrate photocharges generated in the photodiode; a first sampling transistor electrically connected to a first node; a first capacitor electrically connected to a first node and configured to store a charge corresponding to a voltage of the floating diffusion node which is reset; a second sampling transistor electrically connected to a second node; a second capacitor electrically connected to the second node and configured to store a charge corresponding to a voltage of the floating diffusion node in which the photocharges are integrated; and at least one mode transistor configured to adjust an equivalent capacitance of each of the first node and the second node according to a mode control signal.