公开(公告)号：US20150084129A1

公开(公告)日：2015-03-26

申请号：US14487702

申请日：2014-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Myoung LEE ,  Young-Soo SONG ,  Jun-Min LEE ,  Bo-Young LEE

IPC: H01L27/02 ,  H01L27/12 ,  H01L27/088

CPC classification number: H01L27/0207 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/6681

Abstract: A semiconductor device includes a substrate; a device area of the substrate, the device area including a plurality of device unit cells; and a dummy cell array arranged around the device area. The dummy cell array includes a plurality of dummy unit cells repeatedly arranged in a first direction and a second direction perpendicular to the first direction, each of the dummy cell unit having a structure corresponding to a device unit cell. The device unit cell includes at least a first transistor in the device area. The structure of the dummy unit cell includes an active area and a gate line. For each dummy unit cell, the active area and the gate line extend beyond a cell boundary that defines the dummy unit cell.

Abstract translation: 半导体器件包括衬底; 所述衬底的器件区域，所述器件区域包括多个器件单元电池; 以及布置在设备区域周围的虚拟单元阵列。 虚设单元阵列包括沿第一方向重复地排列的多个虚拟单位单元和垂直于第一方向的第二方向，虚拟单元单元具有对应于器件单位单元的结构。 器件单元电池在器件区域中至少包括第一晶体管。 虚拟单元的结构包括有源区和栅极线。 对于每个虚拟单元，有源区和栅极线延伸超过限定虚拟单元的单元边界。