公开(公告)号：US20230217659A1

公开(公告)日：2023-07-06

申请号：US18051763

申请日：2022-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Hwan LEE ,  Sun Young LEE ,  Seok Hwa JUNG

IPC: H01L27/11582 ,  H01L27/11573

CPC classification number: H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes a cell substrate including a cell array region and an extension region surrounding the cell array region, a mold structure including gate electrodes sequentially stacked on the cell substrate, channel structures disposed on the cell array region and intersecting the gate electrodes, a bit-line connected to at least some of the channel structures, a block isolation region cutting the mold structure, a source layer disposed between the cell substrate and the mold structure and connected to a side surface of each of the channel structures, and a support layer disposed between the source layer and the mold structure on upper surfaces of the cell substrate and the source layer. The support layer includes a support structure contacting the upper surface of the cell substrate. The support structure includes a peripheral portion surrounding the cell array region, and a mesh portion disposed on the extension region.

公开(公告)号：US20210210505A1

公开(公告)日：2021-07-08

申请号：US16995057

申请日：2020-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoo Jin CHOI ,  Jung-Hwan LEE

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11526 ,  H01L27/11565 ,  H01L27/11519

Abstract: A nonvolatile memory device and method for fabricating the same are provided. The nonvolatile memory device comprising: a substrate; a mold structure including a first insulating pattern and a plurality of gate electrodes alternately stacked in a first direction on the substrate; and a word line cut region which extends in a second direction different from the first direction and cuts the mold structure, wherein the word line cut region includes a common source line, and the common source line includes a second insulating pattern extending in the second direction, and a conductive pattern extending in the second direction and being in contact with the second insulating pattern and a cross-section in the second direction.

公开(公告)号：US20230005954A1

公开(公告)日：2023-01-05

申请号：US17736384

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hwan LEE ,  Hyun Min CHO

IPC: H01L27/11582

Abstract: A nonvolatile memory device with improved reliability is provided. The nonvolatile memory device comprises a substrate, a mold structure including a plurality of word lines stacked on the substrate, a first word line cut region configured to cut the mold structure, a first channel structure spaced apart from the first word line cut region by a first distance, and disposed in the mold structure and the substrate, and a second channel structure spaced apart from the first word line cut region by a second distance, and disposed in the mold structure and the substrate, wherein the second distance is greater than the first distance, a first width of the first channel structure is different from a second width of the second channel structure, and a first length of the first channel structure is different from a second length of the second channel structure.