公开(公告)号：US20170358457A1

公开(公告)日：2017-12-14

申请号：US15416574

申请日：2017-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwa Jin JANG ,  Jae Young PARK ,  Sun Young LEE ,  Ha Kyu SEONG ,  Han Mei CHOI

IPC: H01L21/3065 ,  H01L21/84 ,  H01L21/263 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/3065 ,  H01L21/2633 ,  H01L21/3247 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.

公开(公告)号：US20230217659A1

公开(公告)日：2023-07-06

申请号：US18051763

申请日：2022-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Hwan LEE ,  Sun Young LEE ,  Seok Hwa JUNG

IPC: H01L27/11582 ,  H01L27/11573

CPC classification number: H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes a cell substrate including a cell array region and an extension region surrounding the cell array region, a mold structure including gate electrodes sequentially stacked on the cell substrate, channel structures disposed on the cell array region and intersecting the gate electrodes, a bit-line connected to at least some of the channel structures, a block isolation region cutting the mold structure, a source layer disposed between the cell substrate and the mold structure and connected to a side surface of each of the channel structures, and a support layer disposed between the source layer and the mold structure on upper surfaces of the cell substrate and the source layer. The support layer includes a support structure contacting the upper surface of the cell substrate. The support structure includes a peripheral portion surrounding the cell array region, and a mesh portion disposed on the extension region.

公开(公告)号：US20230189524A1

公开(公告)日：2023-06-15

申请号：US17884853

申请日：2022-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Gu KANG ,  Sang Don ZOO ,  Joon Sung KIM ,  Junghwan PARK ,  Seorim MOON ,  Seok Cheon BAEK ,  Cheol RYOU ,  Sun Young LEE ,  Cheol-Min LIM

IPC: H01L27/11582 ,  H01L23/535

CPC classification number: H01L27/11582 ,  H01L23/535

Abstract: A semiconductor memory device may include a substrate including a first and a second block region, and a stacked structure including insulating films and gate electrodes alternately stacked on the substrate. A vertical channel structure, a word line cut structure, and a block cut structure may penetrate the stacked structure. The word line cut structure may extend in a second direction. The block cut structure may extend in a first direction, connect to the word line cut structure, and define the first and second block regions. The block cut structure may include a first portion connected to the word line cut structure and a second portion connected to the first portion. From a planar viewpoint, the first portion may include at least a part not overlapping the second portion in the first direction and at least a region not overlapping the word line cut structure in the first direction.

公开(公告)号：US20240155127A1

公开(公告)日：2024-05-09

申请号：US18408484

申请日：2024-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Young LEE

IPC: H04N19/122 ,  H04N19/103 ,  H04N19/136 ,  H04N19/176 ,  H04N19/60

CPC classification number: H04N19/122 ,  H04N19/103 ,  H04N19/136 ,  H04N19/176 ,  H04N19/60 ,  H04N19/70

Abstract: Provided are a video decoding method and device. This specification provides a video decoding method comprising the steps of: acquiring a parameter indicating whether a multiple transform set is applicable to a block to be decoded, as well as information about the width of the block to be decoded and the height of the block to be decoded; determining the transform type of the block to be decoded on the basis of at least one of the parameter indicating whether a multiple transform set is applicable, or the information about the width and height of the block to be decoded, and setting a zero-out region of the block to be decoded; and inverse-transforming the block to be decoded on the basis of the zero-out region of the block to be decoded and the result of determining the transform type.

公开(公告)号：US20160049336A1

公开(公告)日：2016-02-18

申请号：US14825556

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Jong HAN ,  Bon Young KOO ,  Ki Yeon PARK ,  Jae Young PARK ,  Sun Young LEE ,  Kyung In CHOI

IPC: H01L21/8234 ,  H01L21/308

CPC classification number: H01L21/3081 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/76224

Abstract: A method for manufacturing a semiconductor device includes forming a trench defining a plurality of active fins in a substrate, forming a sacrificial layer on the plurality of active fins, forming a sacrificial oxide layer, and removing the sacrificial oxide layer. The forming the sacrificial oxide layer includes heat-treating the sacrificial layer and surfaces of the plurality of active fins.

Abstract translation: 一种用于制造半导体器件的方法包括在衬底中形成限定多个活性鳍片的沟槽，在多个活性鳍片上形成牺牲层，形成牺牲氧化物层，以及去除牺牲氧化物层。 形成牺牲氧化物层包括热处理牺牲层和多个活性鳍片的表面。

公开(公告)号：US20130279731A1

公开(公告)日：2013-10-24

申请号：US13925252

申请日：2013-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Tai KIM ,  Byoung-Hee LEE ,  Jang Hoon KANG ,  Joon Rae CHO ,  Jung Eun HAN ,  Ki Won KIM ,  Tae Eon KIM ,  Sun Young LEE

IPC: H04R1/30

CPC classification number: H04R1/30 ,  H04R1/2853 ,  H04R1/2861 ,  H04R5/02 ,  H04R2205/021

Abstract: A docking station for sound amplification and sound quality enhancement is provided. The docking station includes a support structure for holding a mobile terminal having an internal speaker to sustain the posture of the mobile terminal, and a body for supporting the support structure, and for physically contacting the speaker to increase the volume of sound output from the speaker. The body includes a collecting hole for contacting the speaker to collect sound waves, and a guide hole that extends from the collecting hole through the body to the outside along an extension direction, is divided into two branches within the body to guide the collected sound waves along different paths, and has a horn shape whose cross section increases along the extension direction. Hence, the docking station can increase the volume of audible sound and sound quality without separate supply of power.

Abstract translation: 提供用于声音放大和声音质量增强的坞站。 对接站包括用于保持具有内部扬声器的移动终端以支持移动终端的姿势的支撑结构，以及用于支撑支撑结构的主体，并且用于物理地接触扬声器以增加从扬声器输出的声音的音量 。 主体包括用于接触扬声器以收集声波的收集孔，并且沿着延伸方向从收集孔穿过主体延伸到外部的引导孔在主体内被分成两个分支，以引导收集的声波 沿着不同的路径，并且具有横截面沿着延伸方向增加的喇叭形状。 因此，对接站可以增加可听见的声音和音质的音量，而不需要单独的电力供应。