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公开(公告)号：US11881482B2
公开(公告)日：2024-01-23
申请号：US17852040
申请日：2022-06-28
发明人： Gihee Cho , Sanghyuck Ahn , Hyun-Suk Lee , Jungoo Kang , Jin-Su Lee , Hongsik Chae
CPC分类号： H01L27/101 , G11C8/14 , H01L28/60
摘要： A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.
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2.发明授权公开(公告)号：US11532696B2
公开(公告)日：2022-12-20
申请号：US16592842
申请日：2019-10-04
发明人： Gihee Cho , Jungoo Kang , Sangyeol Kang , Hyunsuk Lee
IPC分类号： H01L49/02 , H01L27/108
摘要： Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.
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公开(公告)号：US20210066066A1
公开(公告)日：2021-03-04
申请号：US16853796
申请日：2020-04-21
发明人： Hyun-Suk Lee , Jungoo Kang , Gihee Cho , Sanghyuck Ahn
IPC分类号： H01L21/02 , H01L21/768 , H01L21/12 , H01L21/302
摘要： Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.
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公开(公告)号：US12119374B2
公开(公告)日：2024-10-15
申请号：US17857383
申请日：2022-07-05
发明人： Gihee Cho , Sangyeol Kang , Jungoo Kang , Taekyun Kim , Jiwoon Park , Sanghyuck Ahn , Jin-Su Lee , Hyun-Suk Lee , Hongsik Chae
CPC分类号： H01L28/92 , H10B12/0335 , H10B12/053 , H10B12/315 , H10B12/34 , H10B12/482 , H10B12/488
摘要： A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.
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公开(公告)号：US20240120196A1
公开(公告)日：2024-04-11
申请号：US18529024
申请日：2023-12-05
发明人： Hyun-Suk Lee , Jungoo Kang , Gihee Cho , Sanghyuck Ahn
IPC分类号： H01L21/02 , H01L21/12 , H01L21/302 , H01L21/768
CPC分类号： H01L21/0228 , H01L21/12 , H01L21/302 , H01L21/76885
摘要： A method of manufacturing a semiconductor device includes: forming electrode holes by etching a mold structure including a mold layer and a support layer which are stacked on a substrate; forming lower electrode pillars filling the electrode holes; etching a portion of the support layer between the lower electrode pillars to form a support pattern having a through-hole exposing a portion of a top surface of the mold layer; removing the mold layer through the through-hole to expose sidewalls of the lower electrode pillars; and selectively forming lower electrode patterns on the sidewalls and top surfaces of the lower electrode pillars.
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公开(公告)号：US11569344B2
公开(公告)日：2023-01-31
申请号：US16798826
申请日：2020-02-24
发明人： Jungoo Kang , Hyunsuk Lee , Gihee Cho , Sanghyuck Ahn
IPC分类号： H01L49/02 , H01G4/12 , H01L23/522
摘要： An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.
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公开(公告)号：US11875992B2
公开(公告)日：2024-01-16
申请号：US17851244
申请日：2022-06-28
发明人： Hyun-Suk Lee , Jungoo Kang , Gihee Cho , Sanghyuck Ahn
IPC分类号： H01L21/02 , H01L21/302 , H01L21/12 , H01L21/768
CPC分类号： H01L21/0228 , H01L21/12 , H01L21/302 , H01L21/76885
摘要： Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.
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公开(公告)号：US20230309292A1
公开(公告)日：2023-09-28
申请号：US18164287
申请日：2023-02-03
发明人： Sanghyuck AHN , Jungoo Kang , Dayeon Nam , Juwon Park , Donggeon Lee
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033
摘要： A capacitor includes a first lower electrode pattern including a first material including a metal, and a second lower electrode pattern including a second material different from the first material, wherein the first material and the second material are exposed on an outer sidewall of a lower electrode structure having a pillar shape. The capacitor includes a dielectric layer on the lower electrode structure, and an upper electrode on the dielectric layer.
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9.发明申请公开(公告)号：US20200312952A1
公开(公告)日：2020-10-01
申请号：US16592842
申请日：2019-10-04
发明人： Gihee Cho , Jungoo Kang , Sangyeol Kang , Hyunsuk Lee
IPC分类号： H01L49/02
摘要： Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.
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公开(公告)号：US20230413526A1
公开(公告)日：2023-12-21
申请号：US18332876
申请日：2023-06-12
发明人： Donggeon Lee , Jungoo Kang , Dayeon Nam , Juwon Park , Sungjoon Yoon
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033
摘要： A semiconductor device includes a lower structure, first electrodes spaced apart from each other on the lower structure, a second electrode on the first electrodes, and a dielectric layer between the first electrodes and the second electrode. Each of the first electrodes includes a first element, a second element, and nitrogen (N). A degree of stiffness of a first nitride material including the first element is higher than a degree of stiffness of a second nitride material including the second element. Each of the first electrodes includes a region in which a ratio of a concentration of the first element in the region to a concentration of the second element in the region decreases in a horizontal direction, away from a side surface of each of the first electrodes.
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