公开(公告)号：US12272702B2

公开(公告)日：2025-04-08

申请号：US17546401

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujung Choi ,  Junho Seok ,  Munhwan Kim ,  Wonchul Choi

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.