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公开(公告)号:US11265496B2
公开(公告)日:2022-03-01
申请号:US17019954
申请日:2020-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Munhwan Kim , Jooyeong Gong , Youngsun Oh , Yujung Choi , Hana Choi
IPC: H04N5/374 , H04N9/04 , H01L27/146 , H04N5/369 , H04N5/378
Abstract: An image sensor may include a plurality of first pixels arranged on a substrate along a first axis and a second axis, the plurality of first pixels connected to a first output line, a plurality of second pixels arranged on the substrate along the first axis and the second axis, the plurality of second pixels being mirror-symmetric to the plurality of first pixels along the first axis, and the plurality of second pixels connected to the first output line, a plurality of first color filters, and a plurality of second color filters.
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公开(公告)号:US12272702B2
公开(公告)日:2025-04-08
申请号:US17546401
申请日:2021-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yujung Choi , Junho Seok , Munhwan Kim , Wonchul Choi
IPC: H01L27/146 , H01L27/148
Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.
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公开(公告)号:US12225311B2
公开(公告)日:2025-02-11
申请号:US18482233
申请日:2023-10-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Munhwan Kim , Youngsun Oh , Jongyoon Shin , Honghyun Jeon , Hana Choi
IPC: H04N25/766 , H01L27/146 , H04N25/11 , H04N25/75 , H04N25/778 , H04N25/79
Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.
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公开(公告)号:US11552122B2
公开(公告)日:2023-01-10
申请号:US16865618
申请日:2020-05-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Munhwan Kim , Youngsun Oh
IPC: H01L27/146 , H04N5/374 , H04N5/355 , H04N5/378 , H04N5/3745
Abstract: An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels.
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公开(公告)号:US20250040272A1
公开(公告)日:2025-01-30
申请号:US18756899
申请日:2024-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junoh KIM , Munhwan Kim , Jieun Lee
IPC: H01L27/146
Abstract: There is provided an image sensor including a substrate, a plurality of pixel groups respectively including a plurality of photodiodes provided in the substrate, a pixel isolation pattern provided between the plurality of photodiodes in the substrate, an auxiliary isolation pattern provided to extend inside from a surface of the substrate, and a micro lens provided on the surface of the substrate. The pixel isolation pattern includes an outer isolation pattern provided between the plurality of pixel groups and an inner isolation pattern provided between the plurality of photodiodes within the plurality of pixel group, and the auxiliary isolation pattern is provided between the outer isolation pattern and the inner isolation pattern that are spaced apart from each other or between a plurality of inner isolation patterns that are spaced apart from each other.
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公开(公告)号:US20240055458A1
公开(公告)日:2024-02-15
申请号:US18135637
申请日:2023-04-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Munhwan Kim , Kyungho Lee
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/1464 , H01L27/14645 , H01L27/14621 , H01L27/14627
Abstract: An image sensor includes a color unit pixel comprising sub-pixels arranged in an m×n matrix on a substrate, and a pixel isolation structure isolating the sub-pixels from each other in the color unit pixel. The pixel isolation structure includes an outer isolation film surrounding the color unit pixel, at least one inner isolation film including a portion between two sub-pixels, which are adjacent to each other, among the sub-pixels, a doped isolation liner covering opposite sidewalls of the at least one inner isolation film, and at least one doped isolation pillar contacting at least two sub-pixels selected from the sub-pixels. The at least one doped isolation pillar and the at least one inner isolation film are arranged to define a size of a partial region of each of the sub-pixels.
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公开(公告)号:US11812175B2
公开(公告)日:2023-11-07
申请号:US17673390
申请日:2022-02-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Munhwan Kim , Youngsun Oh , Jongyoon Shin , Honghyun Jeon , Hana Choi
IPC: H04N25/766 , H01L27/146 , H04N25/11 , H04N25/75 , H04N25/79 , H04N25/778
CPC classification number: H04N25/766 , H01L27/1463 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H04N25/11 , H04N25/75 , H04N25/778 , H04N25/79
Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.
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公开(公告)号:US20220360731A1
公开(公告)日:2022-11-10
申请号:US17673390
申请日:2022-02-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Munhwan Kim , Youngsun Oh , Jongyoon Shin , Honghyun Jeon , Hana Choi
IPC: H04N5/374 , H01L27/146 , H04N5/378 , H04N5/369 , H04N9/04 , H04N5/3745
Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.
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