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    Image sensor with 3×3 array pixels
    2.
    发明授权
    Image sensor with 3×3 array pixels 有权

    公开(公告)号：US12272702B2

    公开(公告)日：2025-04-08

    申请号：US17546401

    申请日：2021-12-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yujung Choi ,  Junho Seok ,  Munhwan Kim ,  Wonchul Choi

    IPC: H01L27/146 ,  H01L27/148

    Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.

    Image sensor and method of operating the same
    3.
    发明授权
    Image sensor and method of operating the same 有权

    公开(公告)号：US12225311B2

    公开(公告)日：2025-02-11

    申请号：US18482233

    申请日：2023-10-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Munhwan Kim ,  Youngsun Oh ,  Jongyoon Shin ,  Honghyun Jeon ,  Hana Choi

    IPC: H04N25/766 ,  H01L27/146 ,  H04N25/11 ,  H04N25/75 ,  H04N25/778 ,  H04N25/79

    Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

    Image sensor and operating method
    4.
    发明授权
    Image sensor and operating method 有权

    公开(公告)号：US11552122B2

    公开(公告)日：2023-01-10

    申请号：US16865618

    申请日：2020-05-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Munhwan Kim ,  Youngsun Oh

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355 ,  H04N5/378 ,  H04N5/3745

    Abstract: An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels.

    IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20250040272A1

    公开(公告)日：2025-01-30

    申请号：US18756899

    申请日：2024-06-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junoh KIM ,  Munhwan Kim ,  Jieun Lee

    IPC: H01L27/146

    Abstract: There is provided an image sensor including a substrate, a plurality of pixel groups respectively including a plurality of photodiodes provided in the substrate, a pixel isolation pattern provided between the plurality of photodiodes in the substrate, an auxiliary isolation pattern provided to extend inside from a surface of the substrate, and a micro lens provided on the surface of the substrate. The pixel isolation pattern includes an outer isolation pattern provided between the plurality of pixel groups and an inner isolation pattern provided between the plurality of photodiodes within the plurality of pixel group, and the auxiliary isolation pattern is provided between the outer isolation pattern and the inner isolation pattern that are spaced apart from each other or between a plurality of inner isolation patterns that are spaced apart from each other.

    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME
    6.
    发明公开
    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240055458A1

    公开(公告)日：2024-02-15

    申请号：US18135637

    申请日：2023-04-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Munhwan Kim ,  Kyungho Lee

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627

    Abstract: An image sensor includes a color unit pixel comprising sub-pixels arranged in an m×n matrix on a substrate, and a pixel isolation structure isolating the sub-pixels from each other in the color unit pixel. The pixel isolation structure includes an outer isolation film surrounding the color unit pixel, at least one inner isolation film including a portion between two sub-pixels, which are adjacent to each other, among the sub-pixels, a doped isolation liner covering opposite sidewalls of the at least one inner isolation film, and at least one doped isolation pillar contacting at least two sub-pixels selected from the sub-pixels. The at least one doped isolation pillar and the at least one inner isolation film are arranged to define a size of a partial region of each of the sub-pixels.

    IMAGE SENSOR AND METHOD OF OPERATING THE SAME
    8.
    发明申请
    IMAGE SENSOR AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20220360731A1

    公开(公告)日：2022-11-10

    申请号：US17673390

    申请日：2022-02-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Munhwan Kim ,  Youngsun Oh ,  Jongyoon Shin ,  Honghyun Jeon ,  Hana Choi

    IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N9/04 ,  H04N5/3745

    Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

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