公开(公告)号：US09414328B2

公开(公告)日：2016-08-09

申请号：US14074090

申请日：2013-11-07

Applicant: Samsung Electronics Co., Ltd. ,  Korea Advanced Institute of Science and Technology

Inventor： Jonghyung Kwun ,  Yeonjea Cho ,  Dongjo Park ,  Sanguk Park ,  Wonchul Choi

IPC: H04W36/00 ,  H04W52/24 ,  H04W52/34

CPC classification number: H04W52/243 ,  H04W52/346

Abstract: A data transmission and/or reception method of a base station in a wireless communication system is provided. The data transmission/reception method includes receiving information on interference measured by a terminal, allocating a downlink resource to a terminal based on the received interference information, determining per-subband transmit power distributions of the downlink resource allocation, and transmitting the per-subband transmit power distributions of the downlink resource allocation to neighbor base stations.

Abstract translation: 提供了一种在无线通信系统中的基站的数据发送和/或接收方法。 数据发送/接收方法包括接收由终端测量的干扰的信息，基于接收到的干扰信息向终端分配下行链路资源，确定下行链路资源分配的每个子带的发射功率分布，以及发送每个子带的发射 下行资源分配给邻近基站的功率分布。

公开(公告)号：US11031428B2

公开(公告)日：2021-06-08

申请号：US16917309

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonchul Choi ,  Min Jang ,  Yitae Kim ,  Heegeun Jeong

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

公开(公告)号：US12272702B2

公开(公告)日：2025-04-08

申请号：US17546401

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujung Choi ,  Junho Seok ,  Munhwan Kim ,  Wonchul Choi

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.

公开(公告)号：US12244945B2

公开(公告)日：2025-03-04

申请号：US18112132

申请日：2023-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonchul Choi ,  Kyungho Lee ,  Heesang Kwon ,  Seoyun Park ,  Jung Bin Yun

IPC: H04N25/704 ,  H04N25/13 ,  H04N25/77 ,  H04N25/78

Abstract: An image sensor according to the present disclosure includes: a first pixel group, which includes a first pixel unit corresponding to a first color, and a plurality of first pixels arranged with an m×n form. The image sensor further includes a second pixel unit, which corresponds to a second color, and a plurality of second pixels arranged with the m×n form. The image sensor further includes a third pixel unit, which corresponds to a third color, and a plurality of third pixels arranged with the m×n form, and m and n are natural numbers greater than or equal to 3. A first micro lens is formed on the first pixel unit and shared by at least two adjacent first pixels in a first direction among the plurality of first pixels.

公开(公告)号：US20240282573A1

公开(公告)日：2024-08-22

申请号：US18512923

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehee Jung ,  Seik Jang ,  Jaeseok Kim ,  Hyungkyu Kim ,  Seungjin Baek ,  Changsun Yeo ,  Kwangjin Yoo ,  Jinhwan Jeong ,  Hyeonjeong Jung ,  Wonchul Choi

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/0228 ,  C23C16/042 ,  C23C16/402 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/32139 ,  H01J2237/332

Abstract: A method for processing a substrate including: loading a plurality of first substrates and a plurality of second substrates on which mask patterns are formed into a process chamber; supplying a first pretreatment gas into the process chamber; surface processing the plurality of first substrates using first plasma generated from the first pretreatment gas; supplying a second pretreatment gas into the process chamber; surface processing the plurality of first substrates and the plurality of second substrates using second plasma generated from the second pretreatment gas; supplying precursors to be adsorbed onto each of the plurality of first substrates and the plurality of second substrates into the process chamber; supplying a reactive gas into the process chamber; and depositing a thin film covering the mask patterns on each of the plurality of first substrates and the plurality of second substrates using third plasma generated from the reactive gas and the precursors.

公开(公告)号：US10707253B2

公开(公告)日：2020-07-07

申请号：US15837497

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonchul Choi ,  Min Jang ,  Yitae Kim ,  Heegeun Jeong

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.