公开(公告)号：US20250085445A1

公开(公告)日：2025-03-13

申请号：US18633031

申请日：2024-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chansoo Kang ,  Daewon Kang ,  Minju Kim ,  Tae-Hyun Kim ,  Sang Ki Nam ,  Dougyong Sung ,  Jungmo Yang ,  Sejin Oh ,  Keonhee Lim ,  Junho Im

IPC: G01T1/36 ,  G01T1/20 ,  H01L21/67

Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

公开(公告)号：US20250087509A1

公开(公告)日：2025-03-13

申请号：US18647044

申请日：2024-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jitae Park ,  Kwangho Lee ,  Seongjin In ,  Keonhee Lim ,  Yoonjae Kim ,  Ilwoo Kim ,  Sangki Nam ,  Sejin Oh

IPC: H01L21/67 ,  G01J3/443 ,  G05B19/4099 ,  H01J37/32

Abstract: A semiconductor process device includes a housing including a chamber where a substrate is processed, a viewport in a side wall of the housing, an adapter configured to receive reflected light in which light generated from plasma generated inside the chamber is reflected at a target position on a surface of a structure provided on an upper surface of the substrate, a polarization beam splitter configured to separate the reflected light received from the adapter into P-polarized light and S-polarized light, a spectroscope configured to analyze spectra of the P-polarized light and the S-polarized light, and a control unit configured to monitor a thickness of the structure based on luminous intensity over time at one or more wavelengths of each of the P-polarized light and the S-polarized light, based on results of analyzing the spectra.