公开(公告)号：US20220404395A1

公开(公告)日：2022-12-22

申请号：US17721522

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyoon RYU ,  Seungbum HONG ,  Kwangeun KIM ,  Hoon KIM ,  Jiwon YEOM ,  Seokjung YUN ,  Souk KIM ,  Younghoon SOHN ,  Yusin YANG

IPC: G01R1/067 ,  G01R1/04

Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

公开(公告)号：US20240242317A1

公开(公告)日：2024-07-18

申请号：US18528427

申请日：2023-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu KANG ,  Kwangeun KIM ,  Janghoon KIM ,  Seoyoung PARK ,  Sangho YUN ,  Sungeun LEE ,  Woojin JUNG

IPC: G06T5/00

CPC classification number: G06T5/006 ,  G06T2207/10061

Abstract: An scanning electron microscope (SEM) image distortion correction method includes obtaining at least one SEM image of holes provided on a wafer in a two-dimensional array structure, the holes including at least one central hole within a central region of the at least one SEM image and a plurality of peripheral holes outside the central region, expanding each of the plurality of peripheral holes in a minor axis direction such that a ratio of a minor axis to a major axis of each of the plurality of peripheral holes is about 1:1, and expanding each of the plurality of peripheral holes in multiple directions in the at least one SEM image such that a diameter of the at least one central hole and a diameter of at least one of the plurality of peripheral holes are substantially equal to each other.

公开(公告)号：US20230140892A1

公开(公告)日：2023-05-11

申请号：US17879515

申请日：2022-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung AHN ,  Kwangeun KIM ,  Souk KIM ,  Younghoon SOHN

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/226 ,  H01J37/244

Abstract: A scanning electron microscope (SEM) includes an electron gun, a deflector, an objective lens, first and second detectors each configured to detect emission electrons emitted from the wafer based on the input electron beam being irradiated on the wafer, a first energy filter configured to block electrons having energy less than a first energy among emission electrons emitted from a wafer based on an input electron beam from being detected by the first detector, and a second energy filter configured to block electrons having energy less than second energy among the emission electrons from being detected by the second detector.

公开(公告)号：US20210247328A1

公开(公告)日：2021-08-12

申请号：US17026494

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihak NAM ,  Sungyoon RYU ,  Kwangeun KIM ,  Hwiwoo PARK ,  Dayoung YOON ,  Myoungkyu CHOI

IPC: G01N21/95 ,  G01N21/55 ,  H01L21/687

Abstract: According to embodiments, a wafer inspection device is provided. The wafer inspection device includes a porous chuck including a plurality of pores formed all over the porous chuck to allow pressure for fixing a wafer to be applied thereto, a chuck driving device, a back side inspection optical system configured to inspect a portion of a back surface of the wafer, and a position identification optical system, wherein the porous chuck includes a plurality of holes uniformly formed all over the porous chuck to partially expose the back surface of the wafer and a slit exposing the back surface of the wafer and extending in one direction parallel to a top surface of the porous chuck.