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1.发明公开公开(公告)号：US20230186982A1
公开(公告)日：2023-06-15
申请号：US18164199
申请日：2023-02-03
发明人： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung Kang , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC分类号： G11C11/419 , G11C7/08 , H10B10/00 , H01L23/528 , H01L27/092
CPC分类号： G11C11/419 , G11C7/08 , H10B10/12 , H10B10/18 , H01L23/5286 , H01L27/092
摘要： A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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公开(公告)号：US20210302825A1
公开(公告)日：2021-09-30
申请号：US17028049
申请日：2020-09-22
发明人： Mankyu KANG , Hoon KIM , Jongkeun OH , Minho KIM , Heebom KIM
IPC分类号： G03F1/54 , G03F7/20 , H01L21/033 , H01L21/308
摘要： A reticle for an apparatus for EUV exposure and a method of manufacturing a reticle, the reticle including a substrate including an edge region and a main region; a multi-layer structure on the main region and the edge region, a sidewall of the multi-layer structure overlying the edge region; a capping layer covering an upper surface and the sidewall of the multi-layer structure and at least a portion of the edge region of the substrate; and an absorber layer on the capping layer, the absorber layer covering an entire upper surface of the capping layer on the edge region of the substrate, wherein a stacked structure of the capping layer and the absorber layer is on an upper surface of the edge region of the substrate, and a sidewall of the stacked structure of the capping layer and the absorber layer is perpendicular to an upper surface of the substrate.
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公开(公告)号：US20170251093A1
公开(公告)日：2017-08-31
申请号：US15593034
申请日：2017-05-11
发明人： Si Hyun PARK , Talipov ELMUROD , Dal Young YU , Hoon KIM , Young Woon KIM , Jae Seok LEE , Jae Seung CHOI
CPC分类号： H04M1/72533 , H04L12/282 , H04L12/2834 , H04L63/0492 , H04L63/08 , H04L63/18 , H04L2012/2841 , H04L2012/285 , H04M1/7253 , H04W4/80 , H04W4/90 , H04W12/003
摘要： A control method of a home appliance, the method including retrieving information about a communication device, authenticating the communication device, registering the authenticated communication device, receiving voice data from the registered communication device, outputting a voice signal corresponding to the received voice data to a user, receiving the voice signal from the user, and transmitting voice data corresponding to the received voice signal to the communication device. When the method is used, even if a user loses a communication device in a home, call is possible using a home appliance such as refrigerator.
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公开(公告)号：US20220404395A1
公开(公告)日：2022-12-22
申请号：US17721522
申请日：2022-04-15
发明人： Sungyoon RYU , Seungbum HONG , Kwangeun KIM , Hoon KIM , Jiwon YEOM , Seokjung YUN , Souk KIM , Younghoon SOHN , Yusin YANG
摘要： A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.
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公开(公告)号：US20210383861A1
公开(公告)日：2021-12-09
申请号：US17412588
申请日：2021-08-26
发明人： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung KANG , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC分类号： G11C11/419 , G11C7/08 , H01L23/528 , H01L27/092 , H01L27/11
摘要： A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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6.发明申请公开(公告)号：US20200225572A1
公开(公告)日：2020-07-16
申请号：US16578628
申请日：2019-09-23
发明人： Yigwon KIM , Sangjin KIM , Heeyoung GO , Heebom KIM , Hoon KIM , Hong-Seock CHOI , Jinseok HEO
摘要： Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.
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7.发明申请公开(公告)号：US20200005860A1
公开(公告)日：2020-01-02
申请号：US16566002
申请日：2019-09-10
发明人： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung KANG , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC分类号： G11C11/419 , H01L23/528 , H01L27/092 , H01L27/11
摘要： A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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8.发明申请公开(公告)号：US20170221554A1
公开(公告)日：2017-08-03
申请号：US15417807
申请日：2017-01-27
发明人： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung KANG , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC分类号： G11C11/419 , H01L23/528 , H01L27/092 , H01L27/11
摘要： A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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公开(公告)号：US20150212433A1
公开(公告)日：2015-07-30
申请号：US14338611
申请日：2014-07-23
发明人： Hoon KIM
IPC分类号： G03F7/20
CPC分类号： G03F1/64 , G03F1/22 , G03F1/62 , G03F7/70983
摘要： A pellicle includes a first frame affixing a reticle, the first frame having a tapered locking groove, a second frame on the first frame, the second frame having a locking portion that is detachably combined with the tapered locking groove of the first frame, and a membrane affixed to the second frame.
摘要翻译： 防护薄膜组件包括固定标线的第一框架，第一框架具有锥形锁定槽，第一框架上的第二框架，第二框架具有可拆卸地与第一框架的锥形锁定槽组合的锁定部分， 膜固定在第二框架上。
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