公开(公告)号：US09449918B2

公开(公告)日：2016-09-20

申请号：US14798474

申请日：2015-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Gi Cho ,  Eun-Chul Ahn ,  Sang-Young Kim ,  Joo-Weon Shin ,  Min-Ho Lee

IPC: H01L29/00 ,  H01L23/525 ,  H01L27/112 ,  H01L23/532 ,  G06F12/02

CPC classification number: H01L23/5256 ,  G06F12/0246 ,  H01L23/5329 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.

公开(公告)号：US09123725B2

公开(公告)日：2015-09-01

申请号：US14088654

申请日：2013-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Gi Cho ,  Eun-Chul Ahn ,  Sang-Young Kim ,  Joo-Weon Shin ,  Min-Ho Lee

IPC: H01L29/80 ,  H01L23/525 ,  G06F12/02

CPC classification number: H01L23/5256 ,  G06F12/0246 ,  H01L23/5329 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.

Abstract translation: 半导体器件通过防止通过修复过程的熔断体被电化学迁移电连接而提高了可靠性。 半导体器件包括衬底，熔丝，其包括形成在衬底上相同电平处的第一熔丝图案和第二熔丝图案，第一熔丝图案和第二熔丝图案彼此间隔开第一宽度，使得间隙 在所述保险丝设置在所述第一熔丝图案和所述第二熔丝图案之间的第一位置处，以及形成在所述第一熔丝图案和所述第二熔丝图案上的第一绝缘层，所述第一绝缘层包括位于所述第一位置上方的开口，并且具有 第二宽度小于第一宽度。

公开(公告)号：US20130238624A1

公开(公告)日：2013-09-12

申请号：US13779526

申请日：2013-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Min-Ho Lee ,  Jin-Guk Jeong ,  Hyun-Chul Choi

IPC: G06F17/30

CPC classification number: G06F16/355 ,  G06F16/3322

Abstract: A search system performs a method for conducting a search using a user device. The method includes receiving a search word through the user device. The method also includes displaying a homonym list indicating homonyms of the input search word on a display screen of the user device. The method further includes receiving a selection of one homonym item of the homonym list through the user device. The method still further includes conducting the search through an information search system using the selected homonym item as a search word.

Abstract translation: 搜索系统执行使用用户设备进行搜索的方法。 该方法包括通过用户设备接收搜索词。 该方法还包括在用户设备的显示屏幕上显示指示输入搜索词的同音异义的同义词列表。 所述方法还包括通过所述用户设备接收所述同音符列表中的一个同音符项目的选择。 该方法还包括通过使用所选择的同音符项作为搜索词的信息搜索系统进行搜索。