Image sensor device
    1.
    发明授权

    公开(公告)号:US11756968B2

    公开(公告)日:2023-09-12

    申请号:US16882597

    申请日:2020-05-25

    CPC classification number: H01L27/14605 H04N25/77

    Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

    IMAGE SENSORS AND METHODS OF FABRICATING THE SAME

    公开(公告)号:US20220375982A1

    公开(公告)日:2022-11-24

    申请号:US17564308

    申请日:2021-12-29

    Abstract: Disclosed are image sensors and methods of fabricating the same. The image sensor comprises a substrate including a plurality of pixels, a photoelectric conversion region in the substrate at each of the pixels, a gate electrode on the substrate at each of the pixels, an interlayer dielectric layer on the substrate and the gate electrode, and a contact penetrating the interlayer dielectric layer and on the gate electrode. The contact includes a lower part on the gate electrode and an upper part on the lower part and connected to a wiring line on the interlayer dielectric layer. A planar shape of the lower part of the contact is larger than that of the upper part of the contact.

    Image sensor
    3.
    发明授权

    公开(公告)号:US12166059B2

    公开(公告)日:2024-12-10

    申请号:US17725750

    申请日:2022-04-21

    Abstract: An image sensor comprises a first and second chips. The first chip includes a first semiconductor substrate, a photoelectric conversion layer in the first semiconductor substrate, a color filter, a micro lens, a first transistor adjacent to the photoelectric conversion layer, a first insulating layer, and a first metal layer in the first insulating layer and connected to the first transistor. The second chip includes a second insulating layer, a second semiconductor substrate, a second transistor on the second semiconductor substrate, a second metal layer in the second insulating layer and connected to a gate structure of the second transistor through a gate contact, a landing metal layer below the second metal layer, and a through via in direct contact with the landing metal layer and vertically passing through the second semiconductor substrate. A width of the through via becomes narrower as the width approaches the third surface.

    Image sensor
    4.
    发明授权

    公开(公告)号:US11837612B2

    公开(公告)日:2023-12-05

    申请号:US17239093

    申请日:2021-04-23

    Abstract: An image sensor includes: a substrate including a first surface and a second surface on which light is incident, the second surface being opposite to the first surface; a photoelectric converter provided in the substrate; a first metal layer provided on the first surface of the substrate; a second metal layer provided on the first metal layer; and a capacitor layer provided between the first metal layer and the second metal layer, wherein the capacitor layer includes: a first lower electrode electrically connected to the first metal layer, a first upper electrode electrically connected to the second metal layer, a second upper electrode spaced apart from the first upper electrode and electrically connected to the second metal layer, a first capacitor provided between the first lower electrode and the first upper electrode, and a second capacitor provided between the first lower electrode and the second upper electrode.

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