公开(公告)号：US10445200B2

公开(公告)日：2019-10-15

申请号：US15651342

申请日：2017-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hyung Park ,  HyunJung Shin ,  Isaac Baek ,  Jeonguk Kang ,  Minseok Ko

IPC: G06F11/00 ,  G06F11/20 ,  G11C29/00 ,  G11C29/44 ,  G06F11/07

Abstract: A storage device including: a nonvolatile memory device including a plurality of nonvolatile memory cells, a partial storage area and an overprovision storage area; and a controller configured to control the nonvolatile memory device, wherein when the controller detects a fault of the nonvolatile memory device, the controller negates the partial storage area, reassigns the overprovision storage area, which corresponds to a size of a user area, among the partial storage area, determines a device fail if the overprovision storage area is less than an overprovision threshold after the reassigning of the partial storage area, and determines a recovery success if the overprovision storage area is equal to or greater than the overprovision threshold after the reassigning of the partial storage area.

公开(公告)号：US20240231631A1

公开(公告)日：2024-07-11

申请号：US18221623

申请日：2023-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minseok Ko ,  Jaewook Kwak ,  Minwook Jung

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0679

Abstract: A method of operating a memory controller is provided. The method includes: receiving a write request from a host; determining whether to inactivate a throttling operation based on whether the write request corresponds to a throttling disable word line and whether a memory block corresponding to the write request needs to be erased; and performing a write operation corresponding to the write request based on the determining.

公开(公告)号：US11474899B2

公开(公告)日：2022-10-18

申请号：US16690676

申请日：2019-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Chul Kim ,  Jongwon Lee ,  Kyungwook Ye ,  Minseok Ko ,  Yangwoo Roh ,  Sung-Hyun Cho

IPC: G06F11/00 ,  G06F11/10 ,  G11C29/52

Abstract: An open-channel storage device being configured to be controlled by a host including a bad block manager, the open-channel storage device including a buffer memory and a nonvolatile memory device. An operation method of the open-channel storage device includes performing a normal operation under control of the host, detecting a sudden power-off immediately after a program failure associated with a first data block among a plurality of memory blocks included in the nonvolatile memory device while the normal operation is performed, dumping a plurality of user data stored in the buffer memory to a dump block among the plurality of memory blocks in response to the detected sudden power-off, detecting a power-on, and performing a data recovery operation on the plurality of user data stored in the dump block in response to the detected power-on.

公开(公告)号：US10372558B2

公开(公告)日：2019-08-06

申请号：US15481781

申请日：2017-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hyung Park ,  HyunJung Shin ,  Isaac Baek ,  Jeonguk Kang ,  Minseok Ko

IPC: G06F11/00 ,  G06F11/14 ,  G06F11/07

Abstract: An operating method of a storage device that includes a nonvolatile memory device and a controller configured to control the nonvolatile memory device, the method including: detecting, by the controller, a fault of the nonvolatile memory device or the controller, notifying, by the controller, a host device of the fault, notifying, by the controller, the host device of one or more recovery schemes for recovering the fault, and recovering, by the controller, the fault in response to a recovery scheme selected by the host device.

公开(公告)号：USRE50129E1

公开(公告)日：2024-09-17

申请号：US17501403

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hyung Park ,  HyunJung Shin ,  Isaac Baek ,  Jeonguk Kang ,  Minseok Ko

IPC: G06F11/00 ,  G06F11/07 ,  G06F11/20 ,  G11C29/00 ,  G11C29/44

CPC classification number: G06F11/0751 ,  G06F11/0727 ,  G06F11/2094 ,  G11C29/44 ,  G11C29/88 ,  G11C29/883 ,  G06F11/0775 ,  G06F2201/805 ,  G06F2201/81

Abstract: A storage device including: a nonvolatile memory device including a plurality of nonvolatile memory cells, a partial storage area and an overprovision storage area; and a controller configured to control the nonvolatile memory device, wherein when the controller detects a fault of the nonvolatile memory device, the controller negates the partial storage area, reassigns the overprovision storage area, which corresponds to a size of a user area, among the partial storage area, determines a device fail if the overprovision storage area is less than an overprovision threshold after the reassigning of the partial storage area, and determines a recovery success if the overprovision storage area is equal to or greater than the overprovision threshold after the reassigning of the partial storage area.

公开(公告)号：US11513971B2

公开(公告)日：2022-11-29

申请号：US17101014

申请日：2020-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keonsoo Ha ,  Minseok Ko ,  Hyunjoo Maeng ,  Jihyung Park

IPC: G06F11/20 ,  G06F12/1018 ,  G06F12/02

Abstract: An address mapping method of a storage device which includes a plurality of sub-storage devices each including an over-provision area includes detecting mapping information of a received logical address from a mapping table, selecting a hash function corresponding to the received logical address depending on the mapping information, selecting any one, which is to be mapped onto the received logical address, of the plurality of sub-storage devices by using the selected hash function, and mapping the received logical address onto the over-provision area of the selected sub-storage device. The selected hash function is selected from a default hash function and a plurality of hash functions to provide a rule for selecting the any one of the plurality of sub-storage devices.