公开(公告)号：US09704690B2

公开(公告)日：2017-07-11

申请号：US14799588

申请日：2015-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moojin Kim ,  Bongseong Kim ,  Unjoo Lee

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32706 ,  H01J37/32972

Abstract: A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nth period of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1th period of the DC pulse signal, where “n” denotes a natural number.

公开(公告)号：US10332779B2

公开(公告)日：2019-06-25

申请号：US15342456

申请日：2016-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungseok Min ,  Moojin Kim ,  Seongjin Nam ,  Sughyun Sung ,  YoungHoon Song ,  Youngmook Oh

IPC: H01L21/02 ,  H01L21/762 ,  H01L27/108 ,  H01L21/3065 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device may include forming trenches in a substrate to define a fin structure extending in a direction, forming a device isolation layer to fill the trenches, and removing an upper portion of the device isolation layer to expose an upper side surface of the fin structure. The exposing of the upper side surface of the fin structure may include repeatedly performing an etching cycle including a first step and a second step, and an etching rate of the device isolation layer to the fin structure may be higher in the second step than in the first step.