公开(公告)号：US20160358648A1

公开(公告)日：2016-12-08

申请号：US15009814

申请日：2016-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mu-hui PARK ,  Yeong-taek LEE ,  Dae-seok BYEON

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C7/062 ,  G11C11/5642 ,  G11C13/0061 ,  G11C2013/0054 ,  G11C2211/5645

Abstract: A resistive memory device comprising: a memory cell having a programmable resistance representing stored data; and a read circuit configured to be connected to the memory cell via a first signal line and read the stored data, wherein the read circuit includes: a voltage controller configured to control a first voltage of the first signal line to be a constant voltage and output a signal to a sensing node; and a sense amplifier connected to the voltage controller via the sensing node, and configured to compare a sensing voltage of the sensing node with a reference voltage.

Abstract translation: 一种电阻式存储器件，包括：具有表示存储数据的可编程电阻的存储单元; 以及读取电路，被配置为经由第一信号线连接到所述存储单元并读取所存储的数据，其中所述读取电路包括：电压控制器，被配置为将所述第一信号线的第一电压控制为恒定电压并输出 到感测节点的信号; 以及感测放大器，其经由感测节点连接到电压控制器，并且被配置为将感测节点的感测电压与参考电压进行比较。