公开(公告)号：US09508865B2

公开(公告)日：2016-11-29

申请号：US14664298

申请日：2015-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongbaek Seon ,  Seokjun Seo ,  Taesang Kim ,  Myungkwan Ryu ,  Seongho Cho

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78681 ,  H01L29/78696

Abstract: According to example embodiments, a transistor includes a gate, a channel layer that is separate from the gate, a gate insulating layer between the gate and the channel layer, and a source electrode and a drain electrode respectively contacting a first region and a second region of the channel layer. The gate insulating layer includes an impurity metal containing region that includes an impurity metal and contacts the channel layer. The gate insulating layer includes an impurity metal non-containing region contacting the gate that is not doped with the impurity metal.

Abstract translation: 根据示例性实施例，晶体管包括栅极，与栅极分离的沟道层，栅极和沟道层之间的栅极绝缘层，以及分别接触第一区域和第二区域的源电极和漏电极 的通道层。 栅极绝缘层包括含杂质金属并与沟道层接触的杂质金属含有区域。 栅极绝缘层包括与不掺杂杂质金属的栅极接触的杂质金属非含有区域。