公开(公告)号：US20230095469A1

公开(公告)日：2023-03-30

申请号：US17849783

申请日：2022-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohee Hwang ,  Taehun Kim ,  Minkyung Bae ,  Nayeong Yun

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A vertical non-volatile memory device includes: a memory stack structure including gate lines and interlayer insulating layers and a channel hole extending in a stacking direction; a channel layer in the channel hole and extending in the stacking direction; and an information storage structure including a composite blocking insulating layer, a charge storage layer, and a tunneling insulating layer sequentially arranged in a horizontal direction from the gate lines to the channel layer, wherein the composite blocking insulating layer includes a metal oxide having a higher dielectric constant than silicon oxide, and the composite blocking insulating layer includes a first blocking insulating layer on sides of the gate lines and a second blocking insulating layer that is between the first blocking insulating layer and the charge storage layer and has a lower oxidation density than the first blocking insulating layer.