VERTICAL NON-VOLATILE MEMORY DEVICES

    公开(公告)号:US20230095469A1

    公开(公告)日:2023-03-30

    申请号:US17849783

    申请日:2022-06-27

    Abstract: A vertical non-volatile memory device includes: a memory stack structure including gate lines and interlayer insulating layers and a channel hole extending in a stacking direction; a channel layer in the channel hole and extending in the stacking direction; and an information storage structure including a composite blocking insulating layer, a charge storage layer, and a tunneling insulating layer sequentially arranged in a horizontal direction from the gate lines to the channel layer, wherein the composite blocking insulating layer includes a metal oxide having a higher dielectric constant than silicon oxide, and the composite blocking insulating layer includes a first blocking insulating layer on sides of the gate lines and a second blocking insulating layer that is between the first blocking insulating layer and the charge storage layer and has a lower oxidation density than the first blocking insulating layer.

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