公开(公告)号：US20180374926A1

公开(公告)日：2018-12-27

申请号：US15861949

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGSOO LEE ,  WONKEUN CHUNG ,  HOONJOO NA ,  SUYOUNG BAE ,  JAEYEOL SONG ,  JONGHAN LEE ,  HYUNGSUK JUNG ,  SANGJIN HYUN

IPC: H01L29/49 ,  H01L29/36

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.