公开(公告)号：US20230215930A1

公开(公告)日：2023-07-06

申请号：US17901054

申请日：2022-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONKEUN CHUNG ,  Byungchul Kang ,  Hongkeun Park ,  Hoonjoo Na ,  Chunghwan Shin

IPC: H01L29/45 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/528

CPC classification number: H01L29/45 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/5286 ,  H01L27/092 ,  H01L29/401 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate that includes an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode on the channel pattern, an active contact electrically connected to the source/drain pattern, and a gate contact electrically connected to the gate electrode. The active contact includes a first barrier pattern, a first seed pattern on the first barrier pattern, a first fill pattern on the first seed pattern, and a first metal-containing pattern between the first seed pattern and the first fill pattern. The first metal-containing pattern includes tungsten nitride. A nitrogen concentration of the first metal-containing pattern decreases in a direction toward the substrate.

公开(公告)号：US20190393318A1

公开(公告)日：2019-12-26

申请号：US16203197

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： WONKEUN CHUNG ,  HEONBOK LEE ,  CHUNGHWAN SHIN ,  YOUNGSUK CHAI ,  SANGJIN HYUN

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

公开(公告)号：US20180374926A1

公开(公告)日：2018-12-27

申请号：US15861949

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGSOO LEE ,  WONKEUN CHUNG ,  HOONJOO NA ,  SUYOUNG BAE ,  JAEYEOL SONG ,  JONGHAN LEE ,  HYUNGSUK JUNG ,  SANGJIN HYUN

IPC: H01L29/49 ,  H01L29/36

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.