公开(公告)号：US20180122676A1

公开(公告)日：2018-05-03

申请号：US15707023

申请日：2017-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Wee Kong ,  Kang Min Park ,  Chul Hwan Choi ,  Yong Joon Hong ,  Kang Soo Kim ,  Sang-Ho Roh ,  Heok Jae Lee ,  Sang Jin Choi

IPC: H01L21/677 ,  H01L21/673 ,  F24F3/16 ,  F04D29/70

Abstract: A substrate transfer apparatus includes: a chamber including a lower surface, an upper surface opposing the lower surface, and a side surface extending between the lower surface and the upper surface; and a fan filter unit disposed on the upper surface of the chamber and configured to introduce air into the chamber. The chamber includes an inclined surface extending from the upper surface to the side surface and positioned to a side of the fan filter unit.

公开(公告)号：US09391138B2

公开(公告)日：2016-07-12

申请号：US14274002

申请日：2014-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Rae Kim ,  Byoung-Deog Choi ,  Hee-Young Park ,  Sang-Ho Roh ,  Jin-Hyung Park ,  Kyung-Mun Byun

IPC: H01L29/06 ,  H01L21/764 ,  H01L27/108

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L23/535 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L29/0649

Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.

Abstract translation: 提供包括空白空间的半导体器件和形成半导体器件的方法。 半导体器件可以包括沿着衬底上的方向延伸的第一和第二线结构，在第一和第二线结构之间的绝缘隔离图案以及在第一和第二线结构之间的导电结构，并且沿绝缘隔离图案沿着方向 。 半导体器件还可以包括空白空间，其包括第一线结构和导电结构之间的第一部分和第一线结构与绝缘隔离图案之间的第二部分。 空白空间的第一部分可以具有与空白空间的第二部分的高度不同的高度。

公开(公告)号：US09953928B2

公开(公告)日：2018-04-24

申请号：US15185384

申请日：2016-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Rae Kim ,  Byoung-Deog Choi ,  Hee-Young Park ,  Sang-Ho Roh ,  Jin-Hyung Park ,  Kyung-Mun Byun

IPC: H01L21/764 ,  H01L23/532 ,  H01L29/06 ,  H01L27/108 ,  H01L23/535

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L23/535 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L29/0649

Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.