公开(公告)号：US20190088798A1

公开(公告)日：2019-03-21

申请号：US16040807

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung KIM ,  Dong-Soo LEE ,  Sang-Yong KIM ,  Jin-Kyu JANG ,  Won-Keun CHUNG ,  Sang-Jin HYUN

IPC: H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/78

CPC classification number: H01L29/7926 ,  H01L21/28088 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/0922 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US20210151610A1

公开(公告)日：2021-05-20

申请号：US17134611

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung KIM ,  Dong-Soo LEE ,  Sang-Yong KIM ,  Jin-Kyu JANG ,  Won-Keun CHUNG ,  Sang-Jin HYUN

IPC: H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US20220352389A1

公开(公告)日：2022-11-03

申请号：US17863127

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung KIM ,  Dong-Soo LEE ,  Sang-Yong KIM ,  Jin-Kyu JANG ,  Won-Keun CHUNG ,  Sang-Jin HYUN

IPC: H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US20200035842A1

公开(公告)日：2020-01-30

申请号：US16532645

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung KIM ,  Dong-Soo LEE ,  Sang-Yong KIM ,  Jin-Kyu JANG ,  Won-Keun CHUNG ,  Sang-Jin HYUN

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L27/092 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.