公开(公告)号：US11004732B2

公开(公告)日：2021-05-11

申请号：US16454860

申请日：2019-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-ki Min ,  Koung-min Ryu ,  Sung-soo Kim ,  Sang-koo Kang

IPC: H01L21/8238 ,  H01L29/78 ,  H01L21/768 ,  H01L29/66 ,  H01L21/762 ,  H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8234

Abstract: A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively; forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region; forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including first colloid; and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.

公开(公告)号：US20190318961A1

公开(公告)日：2019-10-17

申请号：US16454860

申请日：2019-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-ki Min ,  Koung-min Ryu ,  Sung-soo Kim ,  Sang-koo Kang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/423

Abstract: A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively, forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region, forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including a first colloid, and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.

公开(公告)号：US10381265B2

公开(公告)日：2019-08-13

申请号：US15589169

申请日：2017-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-ki Min ,  Koung-min Ryu ,  Sung-soo Kim ,  Sang-koo Kang

IPC: H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/762 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively, forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region, forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including a first colloid, and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.