公开(公告)号：US20240284658A1

公开(公告)日：2024-08-22

申请号：US18381248

申请日：2023-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkyung KANG ,  Seohee PARK ,  Yong-Suk TAK ,  Joonnyung HEO

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/02 ,  H10B12/315 ,  H10B12/485

Abstract: The present disclosure relates to a semiconductor device and a method for manufacturing the same, and the semiconductor device according to an embodiment includes: a substrate including an active region defined by an element isolation layer; a word line crossing the active region; a bit line crossing the active region in a direction different from the word line; a direct contact connecting between the active region and the bit line; a buried contact connected to the active region; and a bit line spacer that is disposed between the bit line and the buried contact and includes carbon. The bit line spacer includes a first region that is adjacent to the bit line and has a first carbon content and a second region that is adjacent to the buried contact and has a second carbon content that is higher than the first carbon content.

公开(公告)号：US20230137072A1

公开(公告)日：2023-05-04

申请号：US17849086

申请日：2022-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teawon KIM ,  Yurim KIM ,  Seohee PARK ,  Kong-Soo LEE ,  Yong Suk TAK

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/78

Abstract: A semiconductor device includes a channel layer disposed on a substrate and a gate structure formed on or under the channel layer. The channel layer includes a single-layer oxide semiconductor material, the channel layer includes indium (In), gallium (Ga), and oxygen (O), the channel layer includes a first region, a second region, and a third region, the third region contacting the gate structure, a second region between the first region and the third region, the first region is the closer to the substrate than the second region and the third region, each of the first region and the third region has a concentration of Ga higher than a concentration of In, and the second region has a concentration of In higher than a concentration of Ga.

公开(公告)号：US20230134099A1

公开(公告)日：2023-05-04

申请号：US17825441

申请日：2022-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teawon KIM ,  Yurim KIM ,  Seohee PARK ,  Kong-Soo LEE ,  Yong Suk TAK

IPC: H01L27/108

Abstract: A semiconductor device includes: a substrate; a conductive line extending on the substrate in a first horizontal direction; an isolation insulating layer extending on the substrate and the conductive line in a second horizontal direction intersecting with the first horizontal direction, and defining a channel trench extending through the isolation insulating layer from an upper surface of the isolation insulating layer to a lower surface of the isolation insulating layer; a crystalline oxide semiconductor layer extending along at least a portion of an inner side surface of the channel trench and at least a portion of a bottom surface of the channel trench and coming in contact with the conductive line; and a gate electrode extending on the crystalline oxide semiconductor layer inside the channel trench in the second horizontal direction.