公开(公告)号：US20230005853A1

公开(公告)日：2023-01-05

申请号：US17674974

申请日：2022-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kunsang PARK ,  Kyuha LEE ,  Youngmin LEE ,  Seokho KIM ,  Inyoung LEE ,  Seokhwan JEONG ,  Sungdong CHO

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/66

Abstract: A semiconductor package includes a first structure having a first insulating layer and a first bonding pad penetrating the first insulating layer, and a second structure on the first structure and having a second insulating layer bonded to the first insulating layer, a bonding pad structure penetrating the second insulating layer and bonded to the first bonding pad, and a test pad structure penetrating the second insulating layer and including a test pad in an opening penetrating the second insulating layer and having a protrusion with a flat surface, and a bonding layer filling the opening and covering the test pad and the flat surface, the protrusion of the test pad extending from a surface in contact with the bonding layer, and the flat surface of the protrusion being within the opening and spaced apart from an interface between the bonding layer and the first insulating layer.

公开(公告)号：US20220139806A1

公开(公告)日：2022-05-05

申请号：US17371602

申请日：2021-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangwuk PARK ,  Youngmin LEE ,  Hyoungyol MUN ,  Inyoung LEE ,  Seokhwan JEONG ,  Sungdong CHO

IPC: H01L23/48 ,  H01L25/065 ,  H01L23/528 ,  H01L21/768

Abstract: A semiconductor device, includes: a substrate having a first surface on which a plurality of devices are disposed and a second surface, opposite to the first surface; an interlayer insulating film on the first surface of the substrate; an etching delay layer disposed in a region between the substrate and the interlayer insulating film; first and second landing pads on the interlayer insulating film; a first through electrode penetrating through the substrate and the interlayer insulating film; and a second through electrode penetrating the substrate, the etching delay layer, and the interlayer insulating film, the second through electrode having a width, greater than that of the first through electrode, wherein each of the first and second through electrodes includes first and second tapered end portions in the interlayer insulating film, each of first and second tapered end portions having a cross-sectional shape narrowing closer to the landing pads.

公开(公告)号：US20220020667A1

公开(公告)日：2022-01-20

申请号：US17213767

申请日：2021-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangwuk PARK ,  Youngmin LEE ,  Sungdong CHO ,  Eunji KIM ,  Hyoungyol MUN ,  Seokhwan JEONG

IPC: H01L23/48 ,  H01L21/762

Abstract: A semiconductor includes a substrate having a first surface and a second surface opposite to each other, the substrate having a via hole extending in a thickness direction from the first surface, a circuit pattern in the first surface of the substrate, a through electrode structure in the via hole, a device isolation structure in a first trench extending in one direction in the first surface of the substrate, the device isolation structure between the via hole and the circuit pattern, the device isolation structure including a first oxide layer pattern and a first nitride layer pattern sequentially stacked on an inner surface of the first trench, the first nitride layer pattern filling the first trench, and an insulation interlayer on the first surface of the substrate and covering the circuit pattern.