公开(公告)号：US11372323B2

公开(公告)日：2022-06-28

申请号：US16814580

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/22 ,  G03F1/26 ,  G03F1/52 ,  G03F1/24 ,  G03F1/34

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

公开(公告)号：US09996001B2

公开(公告)日：2018-06-12

申请号：US15262447

申请日：2016-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung Kim ,  SeongSue Kim

IPC: G03B27/62 ,  G03F1/62 ,  G03F7/20

CPC classification number: G03F1/62 ,  G03F7/70708 ,  G03F7/70916 ,  G03F7/70933

Abstract: A reticle including a mask and an edge cover may be provided. The mask may include a mask substrate and mask patterns on the mask substrate. The edge cover may be coupled to an edge of the mask substrate and may include a floating cover part. The floating cover part may be spaced apart from the mask patterns while extending from a sidewall of the mask substrate over the mask patterns.

公开(公告)号：US10719008B2

公开(公告)日：2020-07-21

申请号：US15625049

申请日：2017-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/26 ,  G03F1/52

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

公开(公告)号：US20200209732A1

公开(公告)日：2020-07-02

申请号：US16814580

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok SEO ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/26 ,  G03F1/22 ,  G03F1/52 ,  G03F1/24

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.