公开(公告)号：US10719008B2

公开(公告)日：2020-07-21

申请号：US15625049

申请日：2017-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/26 ,  G03F1/52

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

公开(公告)号：US12099293B2

公开(公告)日：2024-09-24

申请号：US17328008

申请日：2021-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  Seongsue Kim ,  Changyoung Jeong

IPC: G03F1/26 ,  G03F1/58

CPC classification number: G03F1/26 ,  G03F1/58

Abstract: A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.

公开(公告)号：US20230018819A1

公开(公告)日：2023-01-19

申请号：US17933872

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US11774846B2

公开(公告)日：2023-10-03

申请号：US17933872

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

CPC classification number: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US11487197B2

公开(公告)日：2022-11-01

申请号：US17120480

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US11372323B2

公开(公告)日：2022-06-28

申请号：US16814580

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/22 ,  G03F1/26 ,  G03F1/52 ,  G03F1/24 ,  G03F1/34

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.