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公开(公告)号:US20240422924A1
公开(公告)日:2024-12-19
申请号:US18815994
申请日:2024-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seongjin KIM , Minseok PARK , Gabseong LEE , Hyungsok YEO , Igor IVANOV
IPC: H05K5/02
Abstract: An electronic device includes a display area having a variable size by sliding of a slidable housing, and a sliding assembly which is connected to the housing. The sliding assembly includes sliding guides slidable relative to each other and together with each other, each sliding guide including an elastic member which provides an elastic force to the sliding guide along a sliding direction of the housing. At least one of the sliding guides is connected to a first housing and at least one of the sliding guides is connected to a second housing slidable relative to the first housing.
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公开(公告)号:US20240233850A1
公开(公告)日:2024-07-11
申请号:US18403091
申请日:2024-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jayang YOON , Seongjin KIM , Chihyun KIM , Junehong PARK , Hyeongdo CHOI
IPC: G11C29/12
CPC classification number: G11C29/12005 , G11C2029/1202
Abstract: A word line defect detection circuit configured to detect a defect of at least one word line selected from a plurality of word lines of a memory device includes a current generating circuit configured to generate a detection reference current having a first magnitude and to apply the detection reference current to the selected word line, and a sensing amplifier configured to measure a voltage of the selected word line generated based on the detection reference current. The word line defect detection circuit may be configured to detect a defect of the selected word line in response to the voltage of the selected word line having a value less than a first reference voltage.
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公开(公告)号:US20210020256A1
公开(公告)日:2021-01-21
申请号:US16991443
申请日:2020-08-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wandong KIM , Jinwoo PARK , Seongjin KIM , Sang-Wan NAM
Abstract: A program method of a non-volatile memory device, the non-volatile memory device including a peripheral circuit region and a memory cell region including a cell substrate and a cell string having memory cells stacked perpendicular to a surface of a cell substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell being connected to a second word line closer to the cell substrate, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.
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公开(公告)号:US20240142316A1
公开(公告)日:2024-05-02
申请号:US18216913
申请日:2023-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hanseul KIM , Seongjin KIM
IPC: G01K7/16
CPC classification number: G01K7/16 , G01K2219/00
Abstract: A digital temperature sensor includes a current generation circuit, an oscillation circuit, a conversion circuit and a calculation circuit. The current generation circuit generates a proportional to absolute temperature (PTAT) current and a complementary to absolute temperature (CTAT) current. The oscillation circuit generates a first clock signal having a first cyclic period based on the PTAT current and generates a second clock signal having a second cyclic period based on the CTAT current. The conversion circuit generates a first temperature code based on the first clock signal such that the first temperature code decreases as the operation temperature increases and generates a second temperature code based on the second clock signal such that the second temperature code increases as the operation temperature increases. The calculation circuit calculates a difference between the first temperature code and the second temperature code and generates a corrected temperature code based on the difference.
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公开(公告)号:US20240272596A1
公开(公告)日:2024-08-15
申请号:US18643635
申请日:2024-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Minhee PARK , Donghyun KANG , Seongjin KIM , Taehun KIM , Sangmook LIM
IPC: G05B15/02 , H04N21/442
CPC classification number: G05B15/02 , H04N21/44204
Abstract: An electronic apparatus includes: at least one processor, comprising processing circuitry, individually and/or collectively, configured to: acquire usage behavior data about a plurality of applications executed in a plurality of external devices and a plurality of functions provided by each external device, from the plurality of external devices through a communication circuit; acquire relevant information indicating one or more functions performed within a period range based on an execution point in time of the application among the plurality of functions, based on the acquired usage behavior data; and perform a recommended operation of the one or more functions corresponding to an application executed in the external device, based on the acquired relevant information.
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