公开(公告)号：US20230044730A1

公开(公告)日：2023-02-09

申请号：US17968912

申请日：2022-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wandong KIM ,  Jinyoung KIM ,  Sehwan PARK ,  Hyun Seo ,  Sangwan NAM

IPC: G06F11/07 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

公开(公告)号：US20220057968A1

公开(公告)日：2022-02-24

申请号：US17233816

申请日：2021-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wandong KIM ,  Jinyoung KIM ,  Sehwan PARK ,  Hyun Seo ,  Sangwan NAM

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G06F11/07

Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data, calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

公开(公告)号：US20210020256A1

公开(公告)日：2021-01-21

申请号：US16991443

申请日：2020-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wandong KIM ,  Jinwoo PARK ,  Seongjin KIM ,  Sang-Wan NAM

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/08 ,  G11C16/30 ,  G11C16/04 ,  G11C7/04 ,  G11C7/10

Abstract: A program method of a non-volatile memory device, the non-volatile memory device including a peripheral circuit region and a memory cell region including a cell substrate and a cell string having memory cells stacked perpendicular to a surface of a cell substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell being connected to a second word line closer to the cell substrate, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.

公开(公告)号：US20210020254A1

公开(公告)日：2021-01-21

申请号：US16804470

申请日：2020-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wandong KIM ,  Jinwoo Park ,  Seongjin Kim ,  Sang-wan Nam

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/26 ,  G11C16/24 ,  G11C16/12 ,  G11C7/10

Abstract: A program method of a non-volatile memory device, the non-volatile memory device including a cell string having memory cells stacked perpendicular to a surface of a substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell after the first memory cell is completely programmed, the second memory cell being connected to a second word line closer to the substrate than the first word line, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.

公开(公告)号：US20240020187A1

公开(公告)日：2024-01-18

申请号：US18374717

申请日：2023-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wandong KIM ,  Jinyoung Kim ,  Sehwan Park ,  Hyun Seo ,  Sangwan Nam

IPC: G06F11/07 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

CPC classification number: G06F11/0727 ,  G06F11/0757 ,  G06F11/076 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C11/56

Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.