公开(公告)号：US20240164220A1

公开(公告)日：2024-05-16

申请号：US18384404

申请日：2023-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjong JEONG ,  Seungpil KO ,  Byoungjae BAE ,  Manjin EOM ,  Gawon LEE ,  Kuhoon CHUNG

IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/80 ,  G11C11/161 ,  H10B61/20 ,  H10N50/10 ,  H10N50/01

Abstract: A magnetoresistive random access memory device includes a substrate; conductive patterns on the substrate; an insulating interlayer covering the conductive patterns; a lower electrode contact passing through the insulating interlayer, the lower electrode contact contacting the conductive pattern; a lower electrode on the lower electrode contact, the lower electrode including a rounded sidewall; and a memory structure on the lower electrode, the memory structure including a stacked MTJ structure and upper electrode, wherein a width of the lower electrode increases from a lower portion to an upper portion, the memory structure has a sidewall slope such that a width of the memory structure increases from an upper portion to a lower portion, and at least a portion of a sidewall of the lower electrode is covered by the first insulating interlayer.

公开(公告)号：US20230217835A1

公开(公告)日：2023-07-06

申请号：US18145228

申请日：2022-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Manjin EOM ,  Gawon LEE ,  Seungpil KO ,  Kilho LEE

IPC: H10N50/01 ,  H01J37/305 ,  H10B61/00 ,  H10N50/80

CPC classification number: H01L43/12 ,  H01J37/305 ,  H01L27/222 ,  H01L43/02

Abstract: A method of manufacturing a memory device includes sequentially forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on each other; forming a magnetic tunnel junction structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; forming a sidewall metal layer by etching a portion of a redeposited metal covering a sidewall of the magnetic tunnel junction structure; performing an oxidizing operation that includes oxidizing an exposed surface of the sidewall metal layer to provide an oxidized sidewall metal layer; and performing an irradiating operation that includes irradiating an ion beam towards the oxidized sidewall metal layer. A sidewall insulating layer covering a sidewall of the magnetic tunnel junction structure is formed by alternately performing the oxidizing operation and the irradiating operation two or more times.