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公开(公告)号：US20240164220A1
公开(公告)日：2024-05-16
申请号：US18384404
申请日：2023-10-27
发明人： Hyungjong JEONG , Seungpil KO , Byoungjae BAE , Manjin EOM , Gawon LEE , Kuhoon CHUNG
CPC分类号： H10N50/80 , G11C11/161 , H10B61/20 , H10N50/10 , H10N50/01
摘要： A magnetoresistive random access memory device includes a substrate; conductive patterns on the substrate; an insulating interlayer covering the conductive patterns; a lower electrode contact passing through the insulating interlayer, the lower electrode contact contacting the conductive pattern; a lower electrode on the lower electrode contact, the lower electrode including a rounded sidewall; and a memory structure on the lower electrode, the memory structure including a stacked MTJ structure and upper electrode, wherein a width of the lower electrode increases from a lower portion to an upper portion, the memory structure has a sidewall slope such that a width of the memory structure increases from an upper portion to a lower portion, and at least a portion of a sidewall of the lower electrode is covered by the first insulating interlayer.
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公开(公告)号：US20230217835A1
公开(公告)日：2023-07-06
申请号：US18145228
申请日：2022-12-22
发明人： Manjin EOM , Gawon LEE , Seungpil KO , Kilho LEE
IPC分类号： H10N50/01 , H01J37/305 , H10B61/00 , H10N50/80
CPC分类号： H01L43/12 , H01J37/305 , H01L27/222 , H01L43/02
摘要： A method of manufacturing a memory device includes sequentially forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on each other; forming a magnetic tunnel junction structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; forming a sidewall metal layer by etching a portion of a redeposited metal covering a sidewall of the magnetic tunnel junction structure; performing an oxidizing operation that includes oxidizing an exposed surface of the sidewall metal layer to provide an oxidized sidewall metal layer; and performing an irradiating operation that includes irradiating an ion beam towards the oxidized sidewall metal layer. A sidewall insulating layer covering a sidewall of the magnetic tunnel junction structure is formed by alternately performing the oxidizing operation and the irradiating operation two or more times.
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公开(公告)号：US20230139618A1
公开(公告)日：2023-05-04
申请号：US17862831
申请日：2022-07-12
发明人： Byoungjae BAE , Shin KWON , Jeongmin PARK , Manjin EOM , Hyungjong JEONG
摘要： A semiconductor device includes a substrate including a cell region and a peripheral region, interconnection lines on the cell region and the peripheral region, the interconnection lines being spaced apart from the substrate in a first direction perpendicular to a top surface of the substrate, a lower insulating layer on the cell region and the peripheral region, the lower insulating layer covering the interconnection lines, and a top surface of the lower insulating layer on the cell region being at a lower height than top surfaces of uppermost interconnection lines of the interconnection lines, and data storage patterns on the lower insulating layer on the cell region, the data storage patterns being horizontally spaced apart from each other, and the data storage patterns being connected directly to the top surfaces of the uppermost interconnection lines on the cell region.
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