METHOD OF SEMICONDUCTOR PROCESS SIMULATION
    1.
    发明公开

    公开(公告)号:US20240193323A1

    公开(公告)日:2024-06-13

    申请号:US18534184

    申请日:2023-12-08

    CPC classification number: G05B19/4099 G05B2219/45031

    Abstract: A simulation method of a semiconductor process includes receiving first input data including values of a plurality of parameters received from the outside, setting a simulation using the plurality of parameters, improving the simulation by ordering the plurality of parameters, and executing the simulation by processing a job stored in a queue, wherein the optimizing includes generating a table with respect to the plurality of parameters, ordering the plurality of parameters based on the first input data, generating a job tree based on the plurality of ordered parameters, reconstructing the table based on the job tree, and generating the queue by storing the job in the queue based on the reconstructed table.

    METHOD OF GENERATING DEVICE STRUCTURE PREDICTION MODEL AND DEVICE STRUCTURE SIMULATION APPARATUS

    公开(公告)号:US20230062430A1

    公开(公告)日:2023-03-02

    申请号:US17890557

    申请日:2022-08-18

    Abstract: A device structure simulation apparatus includes a memory storing a device structure simulation program and a processor configured to execute the device structure simulation program stored in the memory. By executing the device structure simulation program, the device structure simulation apparatus is further configured to receive spectrum data of a target device, generate an input data set by performing preprocessing on the spectrum data, and train a model based on the input data set such that the model is configured to predict a structure of the target device. The preprocessing including selecting a certain basis function based on the spectrum data and separating the spectrum data into sets of certain basis functions, and the model includes at least one sub model.

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