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公开(公告)号：US11899744B2
公开(公告)日：2024-02-13
申请号：US16851361
申请日：2020-04-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Songyi Han , Hyunsun Park
IPC: G06F17/16 , G06N3/08 , G06F18/213
CPC classification number: G06F17/16 , G06F18/213 , G06N3/08
Abstract: A neural network apparatus for performing a matrix multiplication operation includes a memory having at least one program stored therein and a processor to perform one or more operations by executing the at least one program. The processor can determine whether to divide an initial weight in one of a column direction and a row direction according to whether a reshape operation and a transpose operation are performed before or after a matrix multiplication operation and generate division weights by dividing the initial weight by a head count in the determined direction. Also, the processor can generate intermediate feature maps by performing a matrix multiplication operation between the input feature map and the division weights and generate a final feature map based on the intermediate feature maps.
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公开(公告)号：US11681915B2
公开(公告)日：2023-06-20
申请号：US16897461
申请日：2020-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Songyi Han , Seungwon Lee , Minkyoung Cho
Abstract: A processor-implemented method of performing a convolution operation is provided. The method includes obtaining input feature map data and kernel data, determine the kernel data based on a number of input channels of the input feature map, a number of output channels of an output feature map, and a number of groups of the input feature map data and a number of groups of the kernel data related to the convolution operation, and performing the convolution operation based on the input feature map data and the determined kernel data.
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公开(公告)号：US11681913B2
公开(公告)日：2023-06-20
申请号：US16786006
申请日：2020-02-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Songyi Han
Abstract: A method of updating a neural network model by a terminal device, includes training a local model using a local data set collected by a terminal device to generate a trained local model; receiving, from a server, an independent identically distributed (i.i.d.) global data set, the i.i.d. global data set being a data set sampled for each class in a plurality of predefined classes; implementing the trained local model by inputting the i.i.d. global data set and transmitting final inference results of the implemented trained local model to the server; and receiving, from the server, a global model updated based on the final inference results of the inference.
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公开(公告)号：US09929099B2
公开(公告)日：2018-03-27
申请号：US15357299
申请日：2016-11-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： VietHa Nguyen , Wookyung You , Inoue Naoya , Hak-Sun Lee , Byung-Kwon Cho , Songyi Han , Jongmin Baek , Jiwon Kang , Byunghee Kim , Young-Ju Park , Sanghoon Ahn , Jiwon Yun , Naein Lee , YoungWoo Cho
IPC: H01L23/48 , H01L23/532 , H01L23/522
CPC classification number: H01L23/53295 , H01L23/5222 , H01L23/53238 , H01L23/53266
Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.
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Patent Agency Ranking
公开(公告)号：US10186485B2
公开(公告)日：2019-01-22
申请号：US15897465
申请日：2018-02-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： VietHa Nguyen , Wookyung You , Inoue Naoya , Hak-Sun Lee , Byung-Kwon Cho , Songyi Han , Jongmin Baek , Jiwon Kang , Byunghee Kim , Young-Ju Park , Sanghoon Ahn , Jiwon Yun , Naein Lee , YoungWoo Cho
IPC: H01L23/48 , H01L23/532 , H01L23/522
Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.
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公开(公告)号：US20180174977A1
公开(公告)日：2018-06-21
申请号：US15897465
申请日：2018-02-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： VietHa Nguyen , Wookyung You , Inoue Naoya , Hak-Sun Lee , Byung-Kwon Cho , Songyi Han , Jongmin Baek , Jiwon Kang , Byunghee Kim , Young-Ju Park , Sanghoon Ahn , Jiwon Yun , Naein Lee , YoungWoo Cho
IPC: H01L23/532 , H01L23/522
CPC classification number: H01L23/53295 , H01L21/7682 , H01L21/76885 , H01L23/5222 , H01L23/528 , H01L23/53238 , H01L23/53266
Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.
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公开(公告)号：US20170170184A1
公开(公告)日：2017-06-15
申请号：US15357299
申请日：2016-11-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： VietHa Nguyen , Wookyung You , Inoue Naoya , Hak-Sun Lee , Byung-Kwon Cho , Songyi Han , Jongmin Baek , Jiwon Kang , Byunghee Kim , Young-Ju Park , Sanghoon Ahn , Jiwon Yun , Naein Lee , YoungWoo Cho
IPC: H01L27/105 , H01L29/06
CPC classification number: H01L23/53295 , H01L23/5222 , H01L23/53238 , H01L23/53266
Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.
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公开(公告)号：US20250028954A1
公开(公告)日：2025-01-23
申请号：US18768183
申请日：2024-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sanghoon Myung , Kyeyeop Kim , Jaehoon Jeong , Yunji Choi , Songyi Han
IPC: G06N3/08
Abstract: A method of generating a neural network model and performing a circuit simulation by using the neural network model is presented. The method includes generating sample data by performing a process simulation based on a temperature and a process parameter, training the neural network model based on the sample data, performing a lightweight operation on the neural network model to generate a lightweight neural network model, re-training the lightweight neural network model, and performing the circuit simulation with the process parameter as an input by using the re-trained lightweight neural network model.
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公开(公告)号：US12026617B2
公开(公告)日：2024-07-02
申请号：US18144009
申请日：2023-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Songyi Han , Seungwon Lee , Minkyoung Cho
Abstract: A processor-implemented method of performing a convolution operation is provided. The method includes obtaining input feature map data and kernel data, determine the kernel data based on a number of input channels of the input feature map, a number of output channels of an output feature map, and a number of groups of the input feature map data and a number of groups of the kernel data related to the convolution operation, and performing the convolution operation based on the input feature map data and the determined kernel data.
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