SENSE AMPLIFIERS AND MEMORY DEVICES HAVING THE SAME
    3.
    发明申请
    SENSE AMPLIFIERS AND MEMORY DEVICES HAVING THE SAME 有权
    SENSE放大器和具有该功能的存储器件

    公开(公告)号:US20150206556A1

    公开(公告)日:2015-07-23

    申请号:US14504596

    申请日:2014-10-02

    CPC classification number: G11C7/065 G11C7/12 G11C11/419

    Abstract: In a sense amplifier, a switching transistor is configured to apply a ground voltage to a ground node in response to a sense enable signal. A first detection circuit is configured to output a first detection signal to the first detection node based on a mode signal and a voltage of a bit-line. A second detection circuit is configured to output a second detection signal to the second detection node based on a voltage of a complementary bit-line. A latch circuit is connected to a supply voltage, the first detection node and the second detection node, and configured to output a first amplified signal and a second amplified signal through a latch node and a complementary latch node, respectively, based on the first detection signal and the second detection signal.

    Abstract translation: 在感测放大器中,开关晶体管被配置为响应于感测使能信号而将接地电压施加到接地节点。 第一检测电路被配置为基于位线的模式信号和电压将第一检测信号输出到第一检测节点。 第二检测电路被配置为基于互补位线的电压将第二检测信号输出到第二检测节点。 锁存电路连接到电源电压,第一检测节点和第二检测节点,并且被配置为分别基于第一检测来通过锁存节点和互补锁存器节点输出第一放大信号和第二放大信号 信号和第二检测信号。

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